The ceramic sample of ScFeO3 (SFO) has been prepared by standard high temperature solid state reaction method using high purity oxides. The formation of the compound as well as structural analysis has been carried out by X-ray diffraction method which confirmed the rhombohedral symmetry with polar space group R3c. The average grain size obtained by the Scherrer formula is of the order of 560 Å. The surface morphology of SFO has been investigated by Atomic Force Microscopy (AFM). The average roughness obtained by two dimensional surface morphology ranges from 5.80 nm to 20.2 nm for surface area 5×5μm2 to 10×10μm2 respectively. The dielectric constant and dielectric loss as a function of frequency (100Hz-1MHz) and temperature (RT-650K) have been measured. At RT and 1kHz frequency the material shows high dielectric constant value (around 1800) with lossy nature. The transport properties such as I-V characteristics, ac and dc conductivities have been measured and activation energy was calculated using the Arrhenius relation. The I-V characteristic along with ac and dc conductivity studies show semiconducting behaviour with dc activation energy of 0.81eV. The Magnetic measurement indicates weak ferromagnetic behaviour. The Enthalpy change (ΔH), Specific heat (Cp) and % Weight-loss of the compound have been measured using DTA/TGA technique. The DTA curve shows transition around 1088K with Cp =2.3Jg-1K-1 and ΔH=18.4Jg-1. The low weight loss (around 2%) from RT -1200K suggest that the material is thermally stable. The results are discussed in detail.
| Published in | American Journal of Modern Physics (Volume 6, Issue 6) |
| DOI | 10.11648/j.ajmp.20170606.14 |
| Page(s) | 132-139 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2024. Published by Science Publishing Group |
X-ray Diffraction, Dielectric, Conductivity, Activation Energy, Enthalpy Change, Specific Heat
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APA Style
Falguni Bhadala, Vikash Kumar Jha, Lokesh Suthar, Maheshwar Roy. (2017). Synthesis, Structural, Electrical and Thermal Properties of ScFeO3 Ceramic. American Journal of Modern Physics, 6(6), 132-139. https://doi.org/10.11648/j.ajmp.20170606.14
ACS Style
Falguni Bhadala; Vikash Kumar Jha; Lokesh Suthar; Maheshwar Roy. Synthesis, Structural, Electrical and Thermal Properties of ScFeO3 Ceramic. Am. J. Mod. Phys. 2017, 6(6), 132-139. doi: 10.11648/j.ajmp.20170606.14
AMA Style
Falguni Bhadala, Vikash Kumar Jha, Lokesh Suthar, Maheshwar Roy. Synthesis, Structural, Electrical and Thermal Properties of ScFeO3 Ceramic. Am J Mod Phys. 2017;6(6):132-139. doi: 10.11648/j.ajmp.20170606.14
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Download@article{10.11648/j.ajmp.20170606.14,
author = {Falguni Bhadala and Vikash Kumar Jha and Lokesh Suthar and Maheshwar Roy},
title = {Synthesis, Structural, Electrical and Thermal Properties of ScFeO3 Ceramic},
journal = {American Journal of Modern Physics},
volume = {6},
number = {6},
pages = {132-139},
doi = {10.11648/j.ajmp.20170606.14},
url = {https://doi.org/10.11648/j.ajmp.20170606.14},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajmp.20170606.14},
abstract = {The ceramic sample of ScFeO3 (SFO) has been prepared by standard high temperature solid state reaction method using high purity oxides. The formation of the compound as well as structural analysis has been carried out by X-ray diffraction method which confirmed the rhombohedral symmetry with polar space group R3c. The average grain size obtained by the Scherrer formula is of the order of 560 Å. The surface morphology of SFO has been investigated by Atomic Force Microscopy (AFM). The average roughness obtained by two dimensional surface morphology ranges from 5.80 nm to 20.2 nm for surface area 5×5μm2 to 10×10μm2 respectively. The dielectric constant and dielectric loss as a function of frequency (100Hz-1MHz) and temperature (RT-650K) have been measured. At RT and 1kHz frequency the material shows high dielectric constant value (around 1800) with lossy nature. The transport properties such as I-V characteristics, ac and dc conductivities have been measured and activation energy was calculated using the Arrhenius relation. The I-V characteristic along with ac and dc conductivity studies show semiconducting behaviour with dc activation energy of 0.81eV. The Magnetic measurement indicates weak ferromagnetic behaviour. The Enthalpy change (ΔH), Specific heat (Cp) and % Weight-loss of the compound have been measured using DTA/TGA technique. The DTA curve shows transition around 1088K with Cp =2.3Jg-1K-1 and ΔH=18.4Jg-1. The low weight loss (around 2%) from RT -1200K suggest that the material is thermally stable. The results are discussed in detail.},
year = {2017}
}
TY - JOUR T1 - Synthesis, Structural, Electrical and Thermal Properties of ScFeO3 Ceramic AU - Falguni Bhadala AU - Vikash Kumar Jha AU - Lokesh Suthar AU - Maheshwar Roy Y1 - 2017/09/25 PY - 2017 N1 - https://doi.org/10.11648/j.ajmp.20170606.14 DO - 10.11648/j.ajmp.20170606.14 T2 - American Journal of Modern Physics JF - American Journal of Modern Physics JO - American Journal of Modern Physics SP - 132 EP - 139 PB - Science Publishing Group SN - 2326-8891 UR - https://doi.org/10.11648/j.ajmp.20170606.14 AB - The ceramic sample of ScFeO3 (SFO) has been prepared by standard high temperature solid state reaction method using high purity oxides. The formation of the compound as well as structural analysis has been carried out by X-ray diffraction method which confirmed the rhombohedral symmetry with polar space group R3c. The average grain size obtained by the Scherrer formula is of the order of 560 Å. The surface morphology of SFO has been investigated by Atomic Force Microscopy (AFM). The average roughness obtained by two dimensional surface morphology ranges from 5.80 nm to 20.2 nm for surface area 5×5μm2 to 10×10μm2 respectively. The dielectric constant and dielectric loss as a function of frequency (100Hz-1MHz) and temperature (RT-650K) have been measured. At RT and 1kHz frequency the material shows high dielectric constant value (around 1800) with lossy nature. The transport properties such as I-V characteristics, ac and dc conductivities have been measured and activation energy was calculated using the Arrhenius relation. The I-V characteristic along with ac and dc conductivity studies show semiconducting behaviour with dc activation energy of 0.81eV. The Magnetic measurement indicates weak ferromagnetic behaviour. The Enthalpy change (ΔH), Specific heat (Cp) and % Weight-loss of the compound have been measured using DTA/TGA technique. The DTA curve shows transition around 1088K with Cp =2.3Jg-1K-1 and ΔH=18.4Jg-1. The low weight loss (around 2%) from RT -1200K suggest that the material is thermally stable. The results are discussed in detail. VL - 6 IS - 6 ER -
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