American Journal of Energy Engineering

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Study of the Diffusion Capacity of a CIGS-based Solar Cell in Dynamic Frequency Regime Under Monochromatic Illumination: Effect of Incidence Angle and Gallium Doping Rate

Received: Dec. 05, 2018    Accepted: Jan. 02, 2019    Published: Jan. 28, 2019
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Abstract

In this paper a study in dynamic frequency regime under monochromatic illumination was made on a CIGS-based solar cell model. After solving the continuity equation of the minority carriers, equation governing the diffusion capacitance of the solar cell are extracted. The study shows that increasing the wavelength in the visible increases the module of capacitance at a gallium doping rate X=0.3. On the other hand, the angle of incidence and the gallium doping rate decrease the module of diffusion capacitance. The study of the Bode diagram illustrated by the variation of the module of the capacitance and phase of the latter as a function of the logarithm of the pulsation shows the existence of two characteristic zones of the pulsation whose limit characterizes the dynamic regime The study shows that the pulsation limiting the static regime to the dynamic regime increases with the increase of the gallium doping rate.

DOI 10.11648/j.ajee.20180604.13
Published in American Journal of Energy Engineering ( Volume 6, Issue 4, December 2018 )
Page(s) 50-56
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This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

CIGS, Frequency Modulation, Wavelength, Incidence Angle, Gallium Doping Rate, Capacitance, Bode Diagram

References
[1] Ibrahima WADE*, Mor NDIAYE, Alain Kassine EHEMBA, Demba DIALLO, Moustapha DIENG «Junction recombination velocity determination initiating the short-circuit and limiting the open circuit of a monofacialesolar cells containing thin film Cu (In, Ga)Se2 (CIGS) under horizontal illumination in static mode», IJESRT, 4 (9), (September, 2015).
[2] Jean Jude Domingo, Alain Kassine Ehemba, Demba Diallo, Ibrahima Wade and MoustaphaDieng. «Study of the capacity of a manofacial solar cell based on CIGS under horizontal monochromatic illumination in frequency dynamic mode: the effect of the wavelength» Int. J. Adv. Res. 4(11), (23 November 2016), 711-719.
[3] Chawla, G. B. R. and Gummel, H. K. «Transition Region Capacitance of Diffusion p-n Junction». IEEE Transactions on Electron Devices, 18, 178-195. http://dx.doi.org/10.1109/T-ED.1971.17172.
[4] Gerome SAMBOU*, Alain Kassine EHEMBA, Mouhamadou Mamour SOCE, Amadou DIAO, Moustapha DIENG «Frequency Modulation Study of a Monofacial Solar Cells Based on Copper Indium and Gallium Diselenide (CIGS) under Monochromatic Illumination: Influence of Incidence Angle and Gallium Doping» American Journal of Materials Science and Engineering, 2018, Vol. 6, No. 1, 7-11.
[5] N. Honma and C. Munakata, «Sample thickness dependence of minority carrier lifetimes measured using an ac photovoltaic method», Japan. J. Appl. Phys. 26,(1987) 2033-6.
[6] A. Dieng, I. Zerbo, M. Wade, A. S. Maiga et G. Sisoko, «Three-dimensional study of a polycrystalline silicon solar cell: the influence of the applied magnetic field on the elctrical parameters», Semicond. Sci. Technol. 26, (2011) pp: 5023-5032.
[7] J. N. Hollenhorst et G. Hasnain, « Frequency dependent whole diffusion in InGaAs double heterostructure » Appl. Phys. Lett, 65(15): (1995) 2203-2205.
[8] F. Ahmed et S. Garg, «simultaneous determination of diffusion length, lifetime and diffusion constant of minority carrier using a modulated beam» International Atomic Energy Agency. International centre for theorical physics. Internal report IC/86/129 , 1987.
[9] J. Dugas, «3D modelling of a reverse cell made with improved multicrystalline silicon wafers». Solar Energy Materials and Solar Cells Volume 32. Issue 1, (January 1994). Pages71-88.
[10] T. Flohr et R. Helbig, «Determination of minority-carrier lifetime and surface recombination velocity by Optical-Beam-Iduced-Current measurements at different light wavelengths» J. Appl. Phys. Vol. 66(7), (1989) pp 3060-3065.
[11] Sissoko, G., Museruka, C., Corréa, A., Gaye, I. and Ndiaye, «Light Spectral Effect on Recombination Parameters of Silicon Solar Cell. World Renewable Energy Congress, Part III» (1996), 1487-1490.
[12] Morales-Acevedo «Effective absorption coefficient for graded band-gap semiconductors and the expected photocurrent density in solar cells» Solar Energy Materials and Solar Cells 93(1): 41-44 January 2009.
[13] G. Hanna, A. Jasenek, U. Rau, and H. W. Schock, «Influence of the Ga-content on the bulk defect densities of Cu (In, Ga). Se2» Thin Solid Films, 387, 71-73 (2001).
[14] Nima Khoshsirat, Nurul Amziah Md Yunus,∗, Mohd Nizar Hamidon, Suhaidi Shafie, Nowshad Amin «Analysis of absorber layer properties effect on CIGS solar cell performance using SCAPS» Optik 126 (2015) 681–686.
[15] Wenham SR, Green MA, Watt ME, Corkish R. Applied Photovoltaics. 2nd ed. ARC Centre for Advanced Silicon Photovoltaics and Photonics; 2007.
[16] Sane Moustapha, Sahin Gokhan, Barro Fabe drissa, Maiga Amadou Seidou. Incidence angle and spectral effects on vertical junction silicon solar cell capacitance. Turk J Phys 2014; 38: 221–7. http://dx.doi.org/10.3906/fiz-1311-9. TUB_ITAK.
[17] LATHI, BHAGWANDAS PANNALAL “Signals, systems and controls” Intext Educational Publisher, New York, 1973-1974.
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    Gérome Sambou, Amadou Diao, Jean Jude Domingo, Djimba Niane, Moustapha Dieng. (2019). Study of the Diffusion Capacity of a CIGS-based Solar Cell in Dynamic Frequency Regime Under Monochromatic Illumination: Effect of Incidence Angle and Gallium Doping Rate. American Journal of Energy Engineering, 6(4), 50-56. https://doi.org/10.11648/j.ajee.20180604.13

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    ACS Style

    Gérome Sambou; Amadou Diao; Jean Jude Domingo; Djimba Niane; Moustapha Dieng. Study of the Diffusion Capacity of a CIGS-based Solar Cell in Dynamic Frequency Regime Under Monochromatic Illumination: Effect of Incidence Angle and Gallium Doping Rate. Am. J. Energy Eng. 2019, 6(4), 50-56. doi: 10.11648/j.ajee.20180604.13

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    AMA Style

    Gérome Sambou, Amadou Diao, Jean Jude Domingo, Djimba Niane, Moustapha Dieng. Study of the Diffusion Capacity of a CIGS-based Solar Cell in Dynamic Frequency Regime Under Monochromatic Illumination: Effect of Incidence Angle and Gallium Doping Rate. Am J Energy Eng. 2019;6(4):50-56. doi: 10.11648/j.ajee.20180604.13

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  • @article{10.11648/j.ajee.20180604.13,
      author = {Gérome Sambou and Amadou Diao and Jean Jude Domingo and Djimba Niane and Moustapha Dieng},
      title = {Study of the Diffusion Capacity of a CIGS-based Solar Cell in Dynamic Frequency Regime Under Monochromatic Illumination: Effect of Incidence Angle and Gallium Doping Rate},
      journal = {American Journal of Energy Engineering},
      volume = {6},
      number = {4},
      pages = {50-56},
      doi = {10.11648/j.ajee.20180604.13},
      url = {https://doi.org/10.11648/j.ajee.20180604.13},
      eprint = {https://download.sciencepg.com/pdf/10.11648.j.ajee.20180604.13},
      abstract = {In this paper a study in dynamic frequency regime under monochromatic illumination was made on a CIGS-based solar cell model. After solving the continuity equation of the minority carriers, equation governing the diffusion capacitance of the solar cell are extracted. The study shows that increasing the wavelength in the visible increases the module of capacitance at a gallium doping rate X=0.3. On the other hand, the angle of incidence and the gallium doping rate decrease the module of diffusion capacitance. The study of the Bode diagram illustrated by the variation of the module of the capacitance and phase of the latter as a function of the logarithm of the pulsation shows the existence of two characteristic zones of the pulsation whose limit characterizes the dynamic regime The study shows that the pulsation limiting the static regime to the dynamic regime increases with the increase of the gallium doping rate.},
     year = {2019}
    }
    

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    T1  - Study of the Diffusion Capacity of a CIGS-based Solar Cell in Dynamic Frequency Regime Under Monochromatic Illumination: Effect of Incidence Angle and Gallium Doping Rate
    AU  - Gérome Sambou
    AU  - Amadou Diao
    AU  - Jean Jude Domingo
    AU  - Djimba Niane
    AU  - Moustapha Dieng
    Y1  - 2019/01/28
    PY  - 2019
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    DO  - 10.11648/j.ajee.20180604.13
    T2  - American Journal of Energy Engineering
    JF  - American Journal of Energy Engineering
    JO  - American Journal of Energy Engineering
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    EP  - 56
    PB  - Science Publishing Group
    SN  - 2329-163X
    UR  - https://doi.org/10.11648/j.ajee.20180604.13
    AB  - In this paper a study in dynamic frequency regime under monochromatic illumination was made on a CIGS-based solar cell model. After solving the continuity equation of the minority carriers, equation governing the diffusion capacitance of the solar cell are extracted. The study shows that increasing the wavelength in the visible increases the module of capacitance at a gallium doping rate X=0.3. On the other hand, the angle of incidence and the gallium doping rate decrease the module of diffusion capacitance. The study of the Bode diagram illustrated by the variation of the module of the capacitance and phase of the latter as a function of the logarithm of the pulsation shows the existence of two characteristic zones of the pulsation whose limit characterizes the dynamic regime The study shows that the pulsation limiting the static regime to the dynamic regime increases with the increase of the gallium doping rate.
    VL  - 6
    IS  - 4
    ER  - 

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Author Information
  • Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal

  • Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal

  • Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal

  • Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal

  • Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal

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