Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR

Arnob Islam; Saiful Islam

doi:doi:10.11648/j.ajop.20140203.14

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Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR

Arnob Islam, Saiful Islam

Published in American Journal of Optics and Photonics (Volume 2, Issue 3)

Received: 29 June 2014 Accepted: 7 July 2014 Published: 20 July 2014

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Abstract

In this paper, a 1310nm intracavity structure Vertical Cavity Surface Emitting Laser (VCSEL) has been designed using quaternary compound material of AlGaInAs in both QW and barrier but with different composition. This choice has been made instead of choosing widely used GaInAsP/ InP, GaInAsN/ GaAs to gain some advantages. This combination has shown good band offset in the conduction band. Lattice matching has been obtained in the layers from the substrate up to the top contact layer except the quantum well (QW) layers where small amount of compressive strain of 1.55% has been used. From the substrate up to the top contact layer, fabrication can be done by epitaxial growth without any difficulty. Reduction in height by using 5 pairs of the top dielectric DBR mirror system of MgO/ a-Si is an attraction of this design which can be fabricated by evaporation technique. Dissipation in the bottom DBR due to current flow has been eliminated by using intracavity structure which also gave a way out for the current flow bypassing the dielectric top DBR. The active material compositions have been chosen to obtain a peak gain at 1310nm. The end result of this design is a top emitting VCSEL based on InP substrate using a different structure which is capable of producing 1310nm light output and which can be constructed easily using widely used epitaxial techniques mixed with the evaporation technique for the top DBR mirror system. The structure is suitable for use in optical ICs.

Published in	American Journal of Optics and Photonics (Volume 2, Issue 3)
DOI	10.11648/j.ajop.20140203.14
Page(s)	37-44
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2014. Published by Science Publishing Group

Keywords

Diode Laser, VCSEL, MQW, DBR

References

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[2]	Kenichi Iga,”Vertical-Cavity Surface-Emitting Laser: Its Conception and Evolution”, Japanese Journal of Applied Physics, Vol. 47, No. 1, 2008, pp. 1-10.
[3]	Z. Pan, L. H. Li, Y. W. Lin, B. Q. Sun, D. S. Jiang and W. K. Ge,”Conduction band offset and electron effective mass in GaInNAs/ GaAs quantum-well structures with low nitrogen concentration”, Applied Physics Letters Volume 78, Number 15, 9 April 2001, pp. 2217-2219.
[4]	Joachim Piprek, Manish Mehta, and Vijay Jayaraman,” Design and Optimization of High-Performance 1.3 μm VCSELs”, Physics and Simulation of Optoelectronic Devices XII, Proceedings of SPIE Vol. 5349, 2004, pp. 375-384.
[5]	J. C. L. Yong, Judy M. Rorison, and Ian H. White,”1.3-_m Quantum-Well InGaAsP, AlGaInAs, and InGaAsN Laser Material Gain: A Theoretical Study”, IEEE Journal of Quantum Electronics, Vol. 38, No. 12, December 2002, pp. 1553-1564.
[6]	S. R. Jin, S. J. Sweeney, S. Tomic, A. R. Adams, and H. Riechert, “Unusual increase of the Auger recombination current in 1.3 mm GaInNAs quantum well lasers under high pressure,” Appl. Phys. Lett., vol. 82, April 2003 pp. 2335-2337.
[7]	S. Lien Chuang, “Physics of Optoelectronic Devices,” 1995, Wiley-Interscience, p. 442.
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[12]	S. Adachi, “Properties of Semiconductor Alloys Group-IV, III-V, II-VI Semiconductor”, John Wiley & Sons, New York, 2009, pp. 133-214, 238-253, 277-286, 307-332.
[13]	I. Vurgaftman, J. R. Meyer and L. R. Ram-Mohan, “Band parameters for III–V compound semiconductors and their alloys”, Journal of Applied Physics, Vol. 89, No. 11, 1 June 2001 Appl. Phys. Rev.: Vurgaftman, Meyer, and Ram-Mohan, pp. 5815-5875.
[14]	Vlad Badilita,” Study of Vertical Coupled-Cavity Laser Structures”, Doctor of Science Thesis, Institut de photonique et d'électronique quantiques, Physics Department, École Polytechnique Fédérale De Lausanne, Université de Bucarest, Roumanie et de nationalité Roumaine, 2004, p. 50.
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APA Style

Arnob Islam, Saiful Islam. (2014). Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR. American Journal of Optics and Photonics, 2(3), 37-44. https://doi.org/10.11648/j.ajop.20140203.14

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ACS Style

Arnob Islam; Saiful Islam. Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR. Am. J. Opt. Photonics 2014, 2(3), 37-44. doi: 10.11648/j.ajop.20140203.14

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AMA Style

Arnob Islam, Saiful Islam. Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR. Am J Opt Photonics. 2014;2(3):37-44. doi: 10.11648/j.ajop.20140203.14

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@article{10.11648/j.ajop.20140203.14,
  author = {Arnob Islam and Saiful Islam},
  title = {Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR},
  journal = {American Journal of Optics and Photonics},
  volume = {2},
  number = {3},
  pages = {37-44},
  doi = {10.11648/j.ajop.20140203.14},
  url = {https://doi.org/10.11648/j.ajop.20140203.14},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajop.20140203.14},
  abstract = {In this paper, a 1310nm intracavity structure Vertical Cavity Surface Emitting Laser (VCSEL) has been designed using quaternary compound material of AlGaInAs in both QW and barrier but with different composition. This choice has been made instead of choosing widely used GaInAsP/ InP, GaInAsN/ GaAs to gain some advantages. This combination has shown good band offset in the conduction band. Lattice matching has been obtained in the layers from the substrate up to the top contact layer except the quantum well (QW) layers where small amount of compressive strain of 1.55% has been used. From the substrate up to the top contact layer, fabrication can be done by epitaxial growth without any difficulty. Reduction in height by using 5 pairs of the top dielectric DBR mirror system of MgO/ a-Si is an attraction of this design which can be fabricated by evaporation technique. Dissipation in the bottom DBR due to current flow has been eliminated by using intracavity structure which also gave a way out for the current flow bypassing the dielectric top DBR. The active material compositions have been chosen to obtain a peak gain at 1310nm. The end result of this design is a top emitting VCSEL based on InP substrate using a different structure which is capable of producing 1310nm light output and which can be constructed easily using widely used epitaxial techniques mixed with the evaporation technique for the top DBR mirror system. The structure is suitable for use in optical ICs.},
 year = {2014}
}

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TY  - JOUR
T1  - Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR
AU  - Arnob Islam
AU  - Saiful Islam
Y1  - 2014/07/20
PY  - 2014
N1  - https://doi.org/10.11648/j.ajop.20140203.14
DO  - 10.11648/j.ajop.20140203.14
T2  - American Journal of Optics and Photonics
JF  - American Journal of Optics and Photonics
JO  - American Journal of Optics and Photonics
SP  - 37
EP  - 44
PB  - Science Publishing Group
SN  - 2330-8494
UR  - https://doi.org/10.11648/j.ajop.20140203.14
AB  - In this paper, a 1310nm intracavity structure Vertical Cavity Surface Emitting Laser (VCSEL) has been designed using quaternary compound material of AlGaInAs in both QW and barrier but with different composition. This choice has been made instead of choosing widely used GaInAsP/ InP, GaInAsN/ GaAs to gain some advantages. This combination has shown good band offset in the conduction band. Lattice matching has been obtained in the layers from the substrate up to the top contact layer except the quantum well (QW) layers where small amount of compressive strain of 1.55% has been used. From the substrate up to the top contact layer, fabrication can be done by epitaxial growth without any difficulty. Reduction in height by using 5 pairs of the top dielectric DBR mirror system of MgO/ a-Si is an attraction of this design which can be fabricated by evaporation technique. Dissipation in the bottom DBR due to current flow has been eliminated by using intracavity structure which also gave a way out for the current flow bypassing the dielectric top DBR. The active material compositions have been chosen to obtain a peak gain at 1310nm. The end result of this design is a top emitting VCSEL based on InP substrate using a different structure which is capable of producing 1310nm light output and which can be constructed easily using widely used epitaxial techniques mixed with the evaporation technique for the top DBR mirror system. The structure is suitable for use in optical ICs.
VL  - 2
IS  - 3
ER  -

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Author Information

Arnob Islam

Department of Electrical and Electronic Engineering, Northern University Bangladesh, Dhaka 1213, Bangladesh
Saiful Islam

Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka 1205, Bangladesh

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APA Style

Arnob Islam, Saiful Islam. (2014). Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR. American Journal of Optics and Photonics, 2(3), 37-44. https://doi.org/10.11648/j.ajop.20140203.14

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ACS Style

Arnob Islam; Saiful Islam. Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR. Am. J. Opt. Photonics 2014, 2(3), 37-44. doi: 10.11648/j.ajop.20140203.14

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AMA Style

Arnob Islam, Saiful Islam. Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR. Am J Opt Photonics. 2014;2(3):37-44. doi: 10.11648/j.ajop.20140203.14

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@article{10.11648/j.ajop.20140203.14,
  author = {Arnob Islam and Saiful Islam},
  title = {Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR},
  journal = {American Journal of Optics and Photonics},
  volume = {2},
  number = {3},
  pages = {37-44},
  doi = {10.11648/j.ajop.20140203.14},
  url = {https://doi.org/10.11648/j.ajop.20140203.14},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajop.20140203.14},
  abstract = {In this paper, a 1310nm intracavity structure Vertical Cavity Surface Emitting Laser (VCSEL) has been designed using quaternary compound material of AlGaInAs in both QW and barrier but with different composition. This choice has been made instead of choosing widely used GaInAsP/ InP, GaInAsN/ GaAs to gain some advantages. This combination has shown good band offset in the conduction band. Lattice matching has been obtained in the layers from the substrate up to the top contact layer except the quantum well (QW) layers where small amount of compressive strain of 1.55% has been used. From the substrate up to the top contact layer, fabrication can be done by epitaxial growth without any difficulty. Reduction in height by using 5 pairs of the top dielectric DBR mirror system of MgO/ a-Si is an attraction of this design which can be fabricated by evaporation technique. Dissipation in the bottom DBR due to current flow has been eliminated by using intracavity structure which also gave a way out for the current flow bypassing the dielectric top DBR. The active material compositions have been chosen to obtain a peak gain at 1310nm. The end result of this design is a top emitting VCSEL based on InP substrate using a different structure which is capable of producing 1310nm light output and which can be constructed easily using widely used epitaxial techniques mixed with the evaporation technique for the top DBR mirror system. The structure is suitable for use in optical ICs.},
 year = {2014}
}

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TY  - JOUR
T1  - Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR
AU  - Arnob Islam
AU  - Saiful Islam
Y1  - 2014/07/20
PY  - 2014
N1  - https://doi.org/10.11648/j.ajop.20140203.14
DO  - 10.11648/j.ajop.20140203.14
T2  - American Journal of Optics and Photonics
JF  - American Journal of Optics and Photonics
JO  - American Journal of Optics and Photonics
SP  - 37
EP  - 44
PB  - Science Publishing Group
SN  - 2330-8494
UR  - https://doi.org/10.11648/j.ajop.20140203.14
AB  - In this paper, a 1310nm intracavity structure Vertical Cavity Surface Emitting Laser (VCSEL) has been designed using quaternary compound material of AlGaInAs in both QW and barrier but with different composition. This choice has been made instead of choosing widely used GaInAsP/ InP, GaInAsN/ GaAs to gain some advantages. This combination has shown good band offset in the conduction band. Lattice matching has been obtained in the layers from the substrate up to the top contact layer except the quantum well (QW) layers where small amount of compressive strain of 1.55% has been used. From the substrate up to the top contact layer, fabrication can be done by epitaxial growth without any difficulty. Reduction in height by using 5 pairs of the top dielectric DBR mirror system of MgO/ a-Si is an attraction of this design which can be fabricated by evaporation technique. Dissipation in the bottom DBR due to current flow has been eliminated by using intracavity structure which also gave a way out for the current flow bypassing the dielectric top DBR. The active material compositions have been chosen to obtain a peak gain at 1310nm. The end result of this design is a top emitting VCSEL based on InP substrate using a different structure which is capable of producing 1310nm light output and which can be constructed easily using widely used epitaxial techniques mixed with the evaporation technique for the top DBR mirror system. The structure is suitable for use in optical ICs.
VL  - 2
IS  - 3
ER  -

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