Electrical and Photoelectrical Properties of Copper (II) Complex/n-Si/Au Heterojunction Diode

Cihat Ozaydin; Kemal Akkilic

doi:doi:10.11648/j.ajop.20140206.11

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Electrical and Photoelectrical Properties of Copper (II) Complex/n-Si/Au Heterojunction Diode

Cihat Ozaydin, Kemal Akkilic

Published in American Journal of Optics and Photonics (Volume 2, Issue 6)

Received: 28 August 2014 Accepted: 6 October 2014 Published: 15 January 2015

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Abstract

In this study, we fabricated copper(II) complex/n-Si/Au organic-inorganic heterojunction diode by forming copper(II) complex thin film on n-type silicon. A direct optical band gap energy values of the copper(II) complex (Cu2C34H34N2O21Cl4) thin film on a glass substrate was obtained as Eg=2.98 eV. The current-voltage (I-V) measurement of the diode was carried out at room temperature and under dark. The ideality factor n and barrier height ϕb values of the diode were found to be 3.17 and 0.71 eV, respectively. The diode indicates non-ideal current-voltage characteristics due to the high ideality factor greater than unity. The series resistance Rs and ideality factor n values were determined using Cheung’s method and obtained as 5.54 kΩ and 3.81, respectively. The capacitance-voltage (C-V) measurements of the diode were performed at different frequency and room temperature. From the analysis of the C-V measurements carrier concentration Nd, diffusion potential Vd and barrier height values ϕbc-v were determined as 2.79x1015 cm-3, 1.078 V, 1.31 eV, respectively. From the I-V measurements of the diode under 1.5 AM illumination, short circuit current (Isc) and open circuit voltage (Voc) have been extracted as 12.8 µA and 153 mV, respectively.

Published in	American Journal of Optics and Photonics (Volume 2, Issue 6)
DOI	10.11648/j.ajop.20140206.11
Page(s)	69-74
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2015. Published by Science Publishing Group

Keywords

Organic-İnorganic, Heterojunction, Schottky Contact, Photovoltaic Properties

References

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Cihat Ozaydin, Kemal Akkilic. (2015). Electrical and Photoelectrical Properties of Copper (II) Complex/n-Si/Au Heterojunction Diode. American Journal of Optics and Photonics, 2(6), 69-74. https://doi.org/10.11648/j.ajop.20140206.11

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ACS Style

Cihat Ozaydin; Kemal Akkilic. Electrical and Photoelectrical Properties of Copper (II) Complex/n-Si/Au Heterojunction Diode. Am. J. Opt. Photonics 2015, 2(6), 69-74. doi: 10.11648/j.ajop.20140206.11

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AMA Style

Cihat Ozaydin, Kemal Akkilic. Electrical and Photoelectrical Properties of Copper (II) Complex/n-Si/Au Heterojunction Diode. Am J Opt Photonics. 2015;2(6):69-74. doi: 10.11648/j.ajop.20140206.11

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@article{10.11648/j.ajop.20140206.11,
  author = {Cihat Ozaydin and Kemal Akkilic},
  title = {Electrical and Photoelectrical Properties of Copper (II) Complex/n-Si/Au Heterojunction Diode},
  journal = {American Journal of Optics and Photonics},
  volume = {2},
  number = {6},
  pages = {69-74},
  doi = {10.11648/j.ajop.20140206.11},
  url = {https://doi.org/10.11648/j.ajop.20140206.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajop.20140206.11},
  abstract = {In this study, we fabricated copper(II) complex/n-Si/Au organic-inorganic heterojunction diode by forming copper(II) complex thin film on n-type silicon. A direct optical band gap energy values of the copper(II) complex (Cu2C34H34N2O21Cl4) thin film on a glass substrate was obtained as Eg=2.98 eV. The current-voltage (I-V) measurement of the diode was carried out at room temperature and under dark. The ideality factor n and barrier height ϕb values of the diode were found to be 3.17 and 0.71 eV, respectively. The diode indicates non-ideal current-voltage characteristics due to the high ideality factor greater than unity. The series resistance Rs and ideality factor n values were determined using Cheung’s method and obtained as 5.54 kΩ and 3.81, respectively. The capacitance-voltage (C-V) measurements of the diode were performed at different frequency and room temperature. From the analysis of the C-V measurements carrier concentration Nd, diffusion potential Vd and barrier height values ϕbc-v were determined as 2.79x1015 cm-3, 1.078 V, 1.31 eV, respectively. From the I-V measurements of the diode under 1.5 AM illumination, short circuit current (Isc) and open circuit voltage (Voc) have been extracted as 12.8 µA and 153 mV, respectively.},
 year = {2015}
}

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TY  - JOUR
T1  - Electrical and Photoelectrical Properties of Copper (II) Complex/n-Si/Au Heterojunction Diode
AU  - Cihat Ozaydin
AU  - Kemal Akkilic
Y1  - 2015/01/15
PY  - 2015
N1  - https://doi.org/10.11648/j.ajop.20140206.11
DO  - 10.11648/j.ajop.20140206.11
T2  - American Journal of Optics and Photonics
JF  - American Journal of Optics and Photonics
JO  - American Journal of Optics and Photonics
SP  - 69
EP  - 74
PB  - Science Publishing Group
SN  - 2330-8494
UR  - https://doi.org/10.11648/j.ajop.20140206.11
AB  - In this study, we fabricated copper(II) complex/n-Si/Au organic-inorganic heterojunction diode by forming copper(II) complex thin film on n-type silicon. A direct optical band gap energy values of the copper(II) complex (Cu2C34H34N2O21Cl4) thin film on a glass substrate was obtained as Eg=2.98 eV. The current-voltage (I-V) measurement of the diode was carried out at room temperature and under dark. The ideality factor n and barrier height ϕb values of the diode were found to be 3.17 and 0.71 eV, respectively. The diode indicates non-ideal current-voltage characteristics due to the high ideality factor greater than unity. The series resistance Rs and ideality factor n values were determined using Cheung’s method and obtained as 5.54 kΩ and 3.81, respectively. The capacitance-voltage (C-V) measurements of the diode were performed at different frequency and room temperature. From the analysis of the C-V measurements carrier concentration Nd, diffusion potential Vd and barrier height values ϕbc-v were determined as 2.79x1015 cm-3, 1.078 V, 1.31 eV, respectively. From the I-V measurements of the diode under 1.5 AM illumination, short circuit current (Isc) and open circuit voltage (Voc) have been extracted as 12.8 µA and 153 mV, respectively.
VL  - 2
IS  - 6
ER  -

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Author Information

Cihat Ozaydin

Department of Physics, Faculty of Science and Art, University of Batman, Batman, Turkey
Kemal Akkilic

Department of Physics, Faculty of Education, University of Dicle, 21280 Diyarbak?r, Turkey

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APA Style

Cihat Ozaydin, Kemal Akkilic. (2015). Electrical and Photoelectrical Properties of Copper (II) Complex/n-Si/Au Heterojunction Diode. American Journal of Optics and Photonics, 2(6), 69-74. https://doi.org/10.11648/j.ajop.20140206.11

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ACS Style

Cihat Ozaydin; Kemal Akkilic. Electrical and Photoelectrical Properties of Copper (II) Complex/n-Si/Au Heterojunction Diode. Am. J. Opt. Photonics 2015, 2(6), 69-74. doi: 10.11648/j.ajop.20140206.11

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AMA Style

Cihat Ozaydin, Kemal Akkilic. Electrical and Photoelectrical Properties of Copper (II) Complex/n-Si/Au Heterojunction Diode. Am J Opt Photonics. 2015;2(6):69-74. doi: 10.11648/j.ajop.20140206.11

Copy | Download

@article{10.11648/j.ajop.20140206.11,
  author = {Cihat Ozaydin and Kemal Akkilic},
  title = {Electrical and Photoelectrical Properties of Copper (II) Complex/n-Si/Au Heterojunction Diode},
  journal = {American Journal of Optics and Photonics},
  volume = {2},
  number = {6},
  pages = {69-74},
  doi = {10.11648/j.ajop.20140206.11},
  url = {https://doi.org/10.11648/j.ajop.20140206.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajop.20140206.11},
  abstract = {In this study, we fabricated copper(II) complex/n-Si/Au organic-inorganic heterojunction diode by forming copper(II) complex thin film on n-type silicon. A direct optical band gap energy values of the copper(II) complex (Cu2C34H34N2O21Cl4) thin film on a glass substrate was obtained as Eg=2.98 eV. The current-voltage (I-V) measurement of the diode was carried out at room temperature and under dark. The ideality factor n and barrier height ϕb values of the diode were found to be 3.17 and 0.71 eV, respectively. The diode indicates non-ideal current-voltage characteristics due to the high ideality factor greater than unity. The series resistance Rs and ideality factor n values were determined using Cheung’s method and obtained as 5.54 kΩ and 3.81, respectively. The capacitance-voltage (C-V) measurements of the diode were performed at different frequency and room temperature. From the analysis of the C-V measurements carrier concentration Nd, diffusion potential Vd and barrier height values ϕbc-v were determined as 2.79x1015 cm-3, 1.078 V, 1.31 eV, respectively. From the I-V measurements of the diode under 1.5 AM illumination, short circuit current (Isc) and open circuit voltage (Voc) have been extracted as 12.8 µA and 153 mV, respectively.},
 year = {2015}
}

Copy | Download

TY  - JOUR
T1  - Electrical and Photoelectrical Properties of Copper (II) Complex/n-Si/Au Heterojunction Diode
AU  - Cihat Ozaydin
AU  - Kemal Akkilic
Y1  - 2015/01/15
PY  - 2015
N1  - https://doi.org/10.11648/j.ajop.20140206.11
DO  - 10.11648/j.ajop.20140206.11
T2  - American Journal of Optics and Photonics
JF  - American Journal of Optics and Photonics
JO  - American Journal of Optics and Photonics
SP  - 69
EP  - 74
PB  - Science Publishing Group
SN  - 2330-8494
UR  - https://doi.org/10.11648/j.ajop.20140206.11
AB  - In this study, we fabricated copper(II) complex/n-Si/Au organic-inorganic heterojunction diode by forming copper(II) complex thin film on n-type silicon. A direct optical band gap energy values of the copper(II) complex (Cu2C34H34N2O21Cl4) thin film on a glass substrate was obtained as Eg=2.98 eV. The current-voltage (I-V) measurement of the diode was carried out at room temperature and under dark. The ideality factor n and barrier height ϕb values of the diode were found to be 3.17 and 0.71 eV, respectively. The diode indicates non-ideal current-voltage characteristics due to the high ideality factor greater than unity. The series resistance Rs and ideality factor n values were determined using Cheung’s method and obtained as 5.54 kΩ and 3.81, respectively. The capacitance-voltage (C-V) measurements of the diode were performed at different frequency and room temperature. From the analysis of the C-V measurements carrier concentration Nd, diffusion potential Vd and barrier height values ϕbc-v were determined as 2.79x1015 cm-3, 1.078 V, 1.31 eV, respectively. From the I-V measurements of the diode under 1.5 AM illumination, short circuit current (Isc) and open circuit voltage (Voc) have been extracted as 12.8 µA and 153 mV, respectively.
VL  - 2
IS  - 6
ER  -

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