Electron-Hole and Photon Recombination Processes in Quantum Well Semiconductor Lasers

Barnbas Achakpa Ikyo

doi:doi:10.11648/j.ajop.20150305.14

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Electron-Hole and Photon Recombination Processes in Quantum Well Semiconductor Lasers

Barnbas Achakpa Ikyo

Published in American Journal of Optics and Photonics (Volume 3, Issue 5)

Received: 16 March 2015 Accepted: 24 March 2015 Published: 19 August 2015

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Abstract

The success obtained from semiconductor laser devices is dependent on the science of manipulating the electron-hole and the photon. While the most useful interaction in the laser is the recombination process that involves the electron and holes to produce a photon, other non-useful processes also occur and in some cases overshadow the preferred recombination process. In this review article, the physics behind radiative and non-radiative recombination processes and loss mechanisms dominant in quantum well semiconductor lasers is presented. The work concludes by suggesting possible solutions based on relevant published works

Published in	American Journal of Optics and Photonics (Volume 3, Issue 5)
DOI	10.11648/j.ajop.20150305.14
Page(s)	80-84
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2015. Published by Science Publishing Group

Keywords

Semiconductors, Lasers, Recombination, Quantum-Well

References

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[3]	K. O'Brien, S. J. Sweeney, A. R. Adams, B. N. Murdin, A. Salhi, Y. Rouillard, and A. Joullie, "Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37 mu m," Applied Physics Letters, vol. 89, Jul 31 2006..
[4]	Z. Yin and X. Tang, "A review of energy bandgap engineering in III–V semiconductor alloys for mid-infrared laser applications," Solid-State Electronics, vol. 51, pp. 6-15, 2007..
[5]	W. W. Bewley, C. L. Felix, I. Vurgaftman, D. W. Stokes, J. R. Meyer, H. Lee, and R. U. Martinelli, "Optical-pumping injection cavity (OPIC) Mid-IR "W" lasers with high efficiency and low loss," Ieee Photonics Technology Letters, vol. 12, pp. 477-479, May 2000.
[6]	R. Q. Yang, J. L. Bradshaw, J. D. Bruno, J. T. Pham, and D. E. Wortman, "Mid-infrared type-II interband cascade lasers," Ieee Journal of Quantum Electronics, vol. 38, pp. 559-568, Jun 2002.
[7]	K. O'Brien, S. J. Sweeney, A. R. Adams, S. R. Jin, C. N. Ahmad, B. N. Murdin, A. Salhi, Y. Rouillard, and A. Joullie, "Carrier recombination mechanisms in mid-infrared GaInAsSb quantum well lasers," Physica Status Solidi B-Basic Solid State Physics, vol. 244, pp. 203-207, Jan 2007.
[8]	W. W. B. I. Vurgaftman., C.L. Canedy, C.S. Kim, M.m. Kim, C.D. Mmerritt, J. Abell, J.R. Lindle & J.R. Mmeyer, "Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption," Nature communication, vol. 10, 2011.
[9]	T. Chen, S. Margalit, U. Koren, K. Yu, L. Chiu, A. Hasson, and A. Yariv, "- Direct measurement of the carrier leakage in an InGaAsP/InP laser," vol. - 42, 1983.
[10]	G. Belenky, Kazarinov, R., Lopata, J., Luryi, S., Tanbun-Elk,. T., Garbinski, P., "Direct measurement of Carrier Out of Active Region in InGaAsP/InP Laser Heterostructures," IEEE Transaction on Electron Devices, vol. 42, p. 4, 1995.
[11]	Numai, T., Fundamentals of semiconductor lasers. 2015: Springer
[12]	She, C., et al., Low-threshold stimulated emission using colloidal quantum wells. Nano letters, 2014. 14(5): p. 2772-2777

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Barnbas Achakpa Ikyo. (2015). Electron-Hole and Photon Recombination Processes in Quantum Well Semiconductor Lasers. American Journal of Optics and Photonics, 3(5), 80-84. https://doi.org/10.11648/j.ajop.20150305.14

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ACS Style

Barnbas Achakpa Ikyo. Electron-Hole and Photon Recombination Processes in Quantum Well Semiconductor Lasers. Am. J. Opt. Photonics 2015, 3(5), 80-84. doi: 10.11648/j.ajop.20150305.14

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AMA Style

Barnbas Achakpa Ikyo. Electron-Hole and Photon Recombination Processes in Quantum Well Semiconductor Lasers. Am J Opt Photonics. 2015;3(5):80-84. doi: 10.11648/j.ajop.20150305.14

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@article{10.11648/j.ajop.20150305.14,
  author = {Barnbas Achakpa Ikyo},
  title = {Electron-Hole and Photon Recombination Processes in Quantum Well Semiconductor Lasers},
  journal = {American Journal of Optics and Photonics},
  volume = {3},
  number = {5},
  pages = {80-84},
  doi = {10.11648/j.ajop.20150305.14},
  url = {https://doi.org/10.11648/j.ajop.20150305.14},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajop.20150305.14},
  abstract = {The success obtained from semiconductor laser devices is dependent on the science of manipulating the electron-hole and the photon. While the most useful interaction in the laser is the recombination process that involves the electron and holes to produce a photon, other non-useful processes also occur and in some cases overshadow the preferred recombination process. In this review article, the physics behind radiative and non-radiative recombination processes and loss mechanisms dominant in quantum well semiconductor lasers is presented. The work concludes by suggesting possible solutions based on relevant published works},
 year = {2015}
}

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TY  - JOUR
T1  - Electron-Hole and Photon Recombination Processes in Quantum Well Semiconductor Lasers
AU  - Barnbas Achakpa Ikyo
Y1  - 2015/08/19
PY  - 2015
N1  - https://doi.org/10.11648/j.ajop.20150305.14
DO  - 10.11648/j.ajop.20150305.14
T2  - American Journal of Optics and Photonics
JF  - American Journal of Optics and Photonics
JO  - American Journal of Optics and Photonics
SP  - 80
EP  - 84
PB  - Science Publishing Group
SN  - 2330-8494
UR  - https://doi.org/10.11648/j.ajop.20150305.14
AB  - The success obtained from semiconductor laser devices is dependent on the science of manipulating the electron-hole and the photon. While the most useful interaction in the laser is the recombination process that involves the electron and holes to produce a photon, other non-useful processes also occur and in some cases overshadow the preferred recombination process. In this review article, the physics behind radiative and non-radiative recombination processes and loss mechanisms dominant in quantum well semiconductor lasers is presented. The work concludes by suggesting possible solutions based on relevant published works
VL  - 3
IS  - 5
ER  -

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Author Information

Barnbas Achakpa Ikyo

Dept. of Physics, Benue State University, Makurdi, Nigeria

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APA Style

Barnbas Achakpa Ikyo. (2015). Electron-Hole and Photon Recombination Processes in Quantum Well Semiconductor Lasers. American Journal of Optics and Photonics, 3(5), 80-84. https://doi.org/10.11648/j.ajop.20150305.14

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ACS Style

Barnbas Achakpa Ikyo. Electron-Hole and Photon Recombination Processes in Quantum Well Semiconductor Lasers. Am. J. Opt. Photonics 2015, 3(5), 80-84. doi: 10.11648/j.ajop.20150305.14

Copy | Download

AMA Style

Barnbas Achakpa Ikyo. Electron-Hole and Photon Recombination Processes in Quantum Well Semiconductor Lasers. Am J Opt Photonics. 2015;3(5):80-84. doi: 10.11648/j.ajop.20150305.14

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@article{10.11648/j.ajop.20150305.14,
  author = {Barnbas Achakpa Ikyo},
  title = {Electron-Hole and Photon Recombination Processes in Quantum Well Semiconductor Lasers},
  journal = {American Journal of Optics and Photonics},
  volume = {3},
  number = {5},
  pages = {80-84},
  doi = {10.11648/j.ajop.20150305.14},
  url = {https://doi.org/10.11648/j.ajop.20150305.14},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajop.20150305.14},
  abstract = {The success obtained from semiconductor laser devices is dependent on the science of manipulating the electron-hole and the photon. While the most useful interaction in the laser is the recombination process that involves the electron and holes to produce a photon, other non-useful processes also occur and in some cases overshadow the preferred recombination process. In this review article, the physics behind radiative and non-radiative recombination processes and loss mechanisms dominant in quantum well semiconductor lasers is presented. The work concludes by suggesting possible solutions based on relevant published works},
 year = {2015}
}

Copy | Download

TY  - JOUR
T1  - Electron-Hole and Photon Recombination Processes in Quantum Well Semiconductor Lasers
AU  - Barnbas Achakpa Ikyo
Y1  - 2015/08/19
PY  - 2015
N1  - https://doi.org/10.11648/j.ajop.20150305.14
DO  - 10.11648/j.ajop.20150305.14
T2  - American Journal of Optics and Photonics
JF  - American Journal of Optics and Photonics
JO  - American Journal of Optics and Photonics
SP  - 80
EP  - 84
PB  - Science Publishing Group
SN  - 2330-8494
UR  - https://doi.org/10.11648/j.ajop.20150305.14
AB  - The success obtained from semiconductor laser devices is dependent on the science of manipulating the electron-hole and the photon. While the most useful interaction in the laser is the recombination process that involves the electron and holes to produce a photon, other non-useful processes also occur and in some cases overshadow the preferred recombination process. In this review article, the physics behind radiative and non-radiative recombination processes and loss mechanisms dominant in quantum well semiconductor lasers is presented. The work concludes by suggesting possible solutions based on relevant published works
VL  - 3
IS  - 5
ER  -

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