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The Influence of Oxygen Pressure on the Photoluminescent Properties of Pulsed Laser Ablated SrAl 2O 4:Eu 2+ , Dy 3+ Thin Films

Received: 29 September 2016     Accepted: 9 October 2016     Published: 31 October 2016
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Abstract

SrAl2O4:Eu2+, Dy3+ thin films were prepared using the pulsed laser deposition (PLD) technique and the variation of morphological, photoluminescence and structural properties with the oxygen pressure were studied. The atomic force microscopy (AFM) and scanning electron microscopy (SEM) were employed in the films morphological measurements. The He-Cd 325 nm laser photoluminescence (PL) system and xenon lamp Cary Eclipse fluorescence spectrophotometer were used to collect the photoluminescence and afterglow data. The elemental and depth profile analysis were done by using Auger electron spectroscopy (AES). SrAl2O4:Eu2+, Dy3+ thin films gave a stable green emission peak at 523 nm, attributed to 4f65d1 → 4f7 Eu2+ ransitions. Superior PL and afterglow (AG) properties were recorded by the film deposited at the intermediate oxygen pressure of 0.38 Torr. The film had a rough surface as revealed by the SEM and AFM images. The AES data consisted of all the main elements in SrAl2O4:Eu2+, Dy3+ material, i.e. Sr, Al and O and the adventitious carbon (C). The film thickness varied inversely with the oxygen pressure. The variations of Sr/Al ratios with the PL intensity are reported.

Published in American Journal of Optics and Photonics (Volume 4, Issue 4)
DOI 10.11648/j.ajop.20160404.11
Page(s) 25-31
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2016. Published by Science Publishing Group

Keywords

PLD, SrAl2O4:Eu+, Dy3+, PL, Oxygen, Sr/Al Ratio

References
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  • APA Style

    P. D. Nsimama. (2016). The Influence of Oxygen Pressure on the Photoluminescent Properties of Pulsed Laser Ablated SrAl 2O 4:Eu 2+ , Dy 3+ Thin Films. American Journal of Optics and Photonics, 4(4), 25-31. https://doi.org/10.11648/j.ajop.20160404.11

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    ACS Style

    P. D. Nsimama. The Influence of Oxygen Pressure on the Photoluminescent Properties of Pulsed Laser Ablated SrAl 2O 4:Eu 2+ , Dy 3+ Thin Films. Am. J. Opt. Photonics 2016, 4(4), 25-31. doi: 10.11648/j.ajop.20160404.11

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    AMA Style

    P. D. Nsimama. The Influence of Oxygen Pressure on the Photoluminescent Properties of Pulsed Laser Ablated SrAl 2O 4:Eu 2+ , Dy 3+ Thin Films. Am J Opt Photonics. 2016;4(4):25-31. doi: 10.11648/j.ajop.20160404.11

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  • @article{10.11648/j.ajop.20160404.11,
      author = {P. D. Nsimama},
      title = {The Influence of Oxygen Pressure on the Photoluminescent Properties of Pulsed Laser Ablated SrAl 2O 4:Eu 2+ , Dy 3+  Thin Films},
      journal = {American Journal of Optics and Photonics},
      volume = {4},
      number = {4},
      pages = {25-31},
      doi = {10.11648/j.ajop.20160404.11},
      url = {https://doi.org/10.11648/j.ajop.20160404.11},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajop.20160404.11},
      abstract = {SrAl2O4:Eu2+, Dy3+ thin films were prepared using the pulsed laser deposition (PLD) technique and the variation of morphological, photoluminescence and structural properties with the oxygen pressure were studied. The atomic force microscopy (AFM) and scanning electron microscopy (SEM) were employed in the films morphological measurements. The He-Cd 325 nm laser photoluminescence (PL) system and xenon lamp Cary Eclipse fluorescence spectrophotometer were used to collect the photoluminescence and afterglow data. The elemental and depth profile analysis were done by using Auger electron spectroscopy (AES). SrAl2O4:Eu2+, Dy3+ thin films gave a stable green emission peak at 523 nm, attributed to 4f65d1 → 4f7 Eu2+ ransitions. Superior PL and afterglow (AG) properties were recorded by the film deposited at the intermediate oxygen pressure of 0.38 Torr. The film had a rough surface as revealed by the SEM and AFM images. The AES data consisted of all the main elements in SrAl2O4:Eu2+, Dy3+ material, i.e. Sr, Al and O and the adventitious carbon (C). The film thickness varied inversely with the oxygen pressure. The variations of Sr/Al ratios with the PL intensity are reported.},
     year = {2016}
    }
    

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    AU  - P. D. Nsimama
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    N1  - https://doi.org/10.11648/j.ajop.20160404.11
    DO  - 10.11648/j.ajop.20160404.11
    T2  - American Journal of Optics and Photonics
    JF  - American Journal of Optics and Photonics
    JO  - American Journal of Optics and Photonics
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    UR  - https://doi.org/10.11648/j.ajop.20160404.11
    AB  - SrAl2O4:Eu2+, Dy3+ thin films were prepared using the pulsed laser deposition (PLD) technique and the variation of morphological, photoluminescence and structural properties with the oxygen pressure were studied. The atomic force microscopy (AFM) and scanning electron microscopy (SEM) were employed in the films morphological measurements. The He-Cd 325 nm laser photoluminescence (PL) system and xenon lamp Cary Eclipse fluorescence spectrophotometer were used to collect the photoluminescence and afterglow data. The elemental and depth profile analysis were done by using Auger electron spectroscopy (AES). SrAl2O4:Eu2+, Dy3+ thin films gave a stable green emission peak at 523 nm, attributed to 4f65d1 → 4f7 Eu2+ ransitions. Superior PL and afterglow (AG) properties were recorded by the film deposited at the intermediate oxygen pressure of 0.38 Torr. The film had a rough surface as revealed by the SEM and AFM images. The AES data consisted of all the main elements in SrAl2O4:Eu2+, Dy3+ material, i.e. Sr, Al and O and the adventitious carbon (C). The film thickness varied inversely with the oxygen pressure. The variations of Sr/Al ratios with the PL intensity are reported.
    VL  - 4
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    ER  - 

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Author Information
  • Department of Science and Laboratory Technology, Dar Es Salaam Institute of Technology, Dar Es Salaam, Tanzania

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