Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution

Alioune Aidara Diouf; Bassirou Lo; Abel Sambou; Oumar Sakho; Aboubaker Chedikh Beye

doi:doi:10.11648/j.ajop.20170505.11

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Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution

Alioune Aidara Diouf, Bassirou Lo, Abel Sambou, Oumar Sakho, Aboubaker Chedikh Beye

Published in American Journal of Optics and Photonics (Volume 5, Issue 5)

Received: 25 October 2017 Accepted: 3 November 2017 Published: 18 December 2017

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Abstract

The Photoluminescence spectra at low temperature of the a-plane oriented ZnO grown on r-plane (011-2) sapphire substrates by plasma-assisted molecular beam epitaxy, showed experimentally three types of excitons A, B and C. In the reflectivity spectra, authors used a program based on the theory of the spatial resonance dispersion Hopfield model to fit the free excitons. The A and B free excitons were fitted together and the C exciton with the band gap. But these fits were not perfect in the transparency zone at low energy. This is mainly due to the fact that the A and B free excitons are closer and the C exciton is closer to the band gap but another reason is the value of the oscillator strength. In the present work, we present a method taking account the Gaussian distribution, to fit perfectly the excitons A, B and C using almost the same physical parameters than the theory of the spatial resonance dispersion Hopfield model.

Published in	American Journal of Optics and Photonics (Volume 5, Issue 5)
DOI	10.11648/j.ajop.20170505.11
Page(s)	50-54
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2017. Published by Science Publishing Group

Keywords

Exciton A, B and C, Gaussian Distribution, Reflectivity Spectrum, a-Plane Oriented ZnO

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APA Style

Alioune Aidara Diouf, Bassirou Lo, Abel Sambou, Oumar Sakho, Aboubaker Chedikh Beye. (2017). Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution. American Journal of Optics and Photonics, 5(5), 50-54. https://doi.org/10.11648/j.ajop.20170505.11

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ACS Style

Alioune Aidara Diouf; Bassirou Lo; Abel Sambou; Oumar Sakho; Aboubaker Chedikh Beye. Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution. Am. J. Opt. Photonics 2017, 5(5), 50-54. doi: 10.11648/j.ajop.20170505.11

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AMA Style

Alioune Aidara Diouf, Bassirou Lo, Abel Sambou, Oumar Sakho, Aboubaker Chedikh Beye. Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution. Am J Opt Photonics. 2017;5(5):50-54. doi: 10.11648/j.ajop.20170505.11

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@article{10.11648/j.ajop.20170505.11,
  author = {Alioune Aidara Diouf and Bassirou Lo and Abel Sambou and Oumar Sakho and Aboubaker Chedikh Beye},
  title = {Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution},
  journal = {American Journal of Optics and Photonics},
  volume = {5},
  number = {5},
  pages = {50-54},
  doi = {10.11648/j.ajop.20170505.11},
  url = {https://doi.org/10.11648/j.ajop.20170505.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajop.20170505.11},
  abstract = {The Photoluminescence spectra at low temperature of the a-plane oriented ZnO grown on r-plane (011-2) sapphire substrates by plasma-assisted molecular beam epitaxy, showed experimentally three types of excitons A, B and C. In the reflectivity spectra, authors used a program based on the theory of the spatial resonance dispersion Hopfield model to fit the free excitons. The A and B free excitons were fitted together and the C exciton with the band gap. But these fits were not perfect in the transparency zone at low energy. This is mainly due to the fact that the A and B free excitons are closer and the C exciton is closer to the band gap but another reason is the value of the oscillator strength. In the present work, we present a method taking account the Gaussian distribution, to fit perfectly the excitons A, B and C using almost the same physical parameters than the theory of the spatial resonance dispersion Hopfield model.},
 year = {2017}
}

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TY  - JOUR
T1  - Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution
AU  - Alioune Aidara Diouf
AU  - Bassirou Lo
AU  - Abel Sambou
AU  - Oumar Sakho
AU  - Aboubaker Chedikh Beye
Y1  - 2017/12/18
PY  - 2017
N1  - https://doi.org/10.11648/j.ajop.20170505.11
DO  - 10.11648/j.ajop.20170505.11
T2  - American Journal of Optics and Photonics
JF  - American Journal of Optics and Photonics
JO  - American Journal of Optics and Photonics
SP  - 50
EP  - 54
PB  - Science Publishing Group
SN  - 2330-8494
UR  - https://doi.org/10.11648/j.ajop.20170505.11
AB  - The Photoluminescence spectra at low temperature of the a-plane oriented ZnO grown on r-plane (011-2) sapphire substrates by plasma-assisted molecular beam epitaxy, showed experimentally three types of excitons A, B and C. In the reflectivity spectra, authors used a program based on the theory of the spatial resonance dispersion Hopfield model to fit the free excitons. The A and B free excitons were fitted together and the C exciton with the band gap. But these fits were not perfect in the transparency zone at low energy. This is mainly due to the fact that the A and B free excitons are closer and the C exciton is closer to the band gap but another reason is the value of the oscillator strength. In the present work, we present a method taking account the Gaussian distribution, to fit perfectly the excitons A, B and C using almost the same physical parameters than the theory of the spatial resonance dispersion Hopfield model.
VL  - 5
IS  - 5
ER  -

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Author Information

Alioune Aidara Diouf

Faculty of Sciences & Techniques, Cheikh Anta Diop University, Dakar, Senegal
Bassirou Lo

Faculty of Sciences & Techniques, Cheikh Anta Diop University, Dakar, Senegal
Abel Sambou

Faculty of Sciences & Techniques, Cheikh Anta Diop University, Dakar, Senegal
Oumar Sakho

Faculty of Sciences & Techniques, Cheikh Anta Diop University, Dakar, Senegal
Aboubaker Chedikh Beye

Faculty of Sciences & Techniques, Cheikh Anta Diop University, Dakar, Senegal

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APA Style

Alioune Aidara Diouf, Bassirou Lo, Abel Sambou, Oumar Sakho, Aboubaker Chedikh Beye. (2017). Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution. American Journal of Optics and Photonics, 5(5), 50-54. https://doi.org/10.11648/j.ajop.20170505.11

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ACS Style

Alioune Aidara Diouf; Bassirou Lo; Abel Sambou; Oumar Sakho; Aboubaker Chedikh Beye. Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution. Am. J. Opt. Photonics 2017, 5(5), 50-54. doi: 10.11648/j.ajop.20170505.11

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AMA Style

Alioune Aidara Diouf, Bassirou Lo, Abel Sambou, Oumar Sakho, Aboubaker Chedikh Beye. Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution. Am J Opt Photonics. 2017;5(5):50-54. doi: 10.11648/j.ajop.20170505.11

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@article{10.11648/j.ajop.20170505.11,
  author = {Alioune Aidara Diouf and Bassirou Lo and Abel Sambou and Oumar Sakho and Aboubaker Chedikh Beye},
  title = {Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution},
  journal = {American Journal of Optics and Photonics},
  volume = {5},
  number = {5},
  pages = {50-54},
  doi = {10.11648/j.ajop.20170505.11},
  url = {https://doi.org/10.11648/j.ajop.20170505.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajop.20170505.11},
  abstract = {The Photoluminescence spectra at low temperature of the a-plane oriented ZnO grown on r-plane (011-2) sapphire substrates by plasma-assisted molecular beam epitaxy, showed experimentally three types of excitons A, B and C. In the reflectivity spectra, authors used a program based on the theory of the spatial resonance dispersion Hopfield model to fit the free excitons. The A and B free excitons were fitted together and the C exciton with the band gap. But these fits were not perfect in the transparency zone at low energy. This is mainly due to the fact that the A and B free excitons are closer and the C exciton is closer to the band gap but another reason is the value of the oscillator strength. In the present work, we present a method taking account the Gaussian distribution, to fit perfectly the excitons A, B and C using almost the same physical parameters than the theory of the spatial resonance dispersion Hopfield model.},
 year = {2017}
}

Copy | Download

TY  - JOUR
T1  - Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution
AU  - Alioune Aidara Diouf
AU  - Bassirou Lo
AU  - Abel Sambou
AU  - Oumar Sakho
AU  - Aboubaker Chedikh Beye
Y1  - 2017/12/18
PY  - 2017
N1  - https://doi.org/10.11648/j.ajop.20170505.11
DO  - 10.11648/j.ajop.20170505.11
T2  - American Journal of Optics and Photonics
JF  - American Journal of Optics and Photonics
JO  - American Journal of Optics and Photonics
SP  - 50
EP  - 54
PB  - Science Publishing Group
SN  - 2330-8494
UR  - https://doi.org/10.11648/j.ajop.20170505.11
AB  - The Photoluminescence spectra at low temperature of the a-plane oriented ZnO grown on r-plane (011-2) sapphire substrates by plasma-assisted molecular beam epitaxy, showed experimentally three types of excitons A, B and C. In the reflectivity spectra, authors used a program based on the theory of the spatial resonance dispersion Hopfield model to fit the free excitons. The A and B free excitons were fitted together and the C exciton with the band gap. But these fits were not perfect in the transparency zone at low energy. This is mainly due to the fact that the A and B free excitons are closer and the C exciton is closer to the band gap but another reason is the value of the oscillator strength. In the present work, we present a method taking account the Gaussian distribution, to fit perfectly the excitons A, B and C using almost the same physical parameters than the theory of the spatial resonance dispersion Hopfield model.
VL  - 5
IS  - 5
ER  -

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