Monolithic Integration of a Multiwavelength Laser Array Associated with SBG Semiconductor Lasers

Renjia Guo; Jing Wu; Dikui Mei; Ping Wang; Lili Liu; Jichu Dong

doi:doi:10.11648/j.ajop.20221004.11

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Monolithic Integration of a Multiwavelength Laser Array Associated with SBG Semiconductor Lasers

Renjia Guo, Jing Wu, Dikui Mei, Ping Wang, Lili Liu, Jichu Dong

Published in American Journal of Optics and Photonics (Volume 10, Issue 4)

Received: 6 November 2022 Accepted: 21 November 2022 Published: 29 November 2022

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Abstract

There are strong demands of monolithically integrated photonic components for future high capacity optical networks such as those for data center, fifth-generation fronthaul or wavelength-division multiplexing systems. Monolithically integrated multiwavelength laser array (MLA) is a potential photonic component used in the above applications. The monolithically integrated MLA associated with sampled Bragg grating (SBG) semiconductor lasers is proposed and studied here. It is shown in the results that a controllable phase shift can be introduced into the central part of the cavity to tune the lasing wavelength. The effective refractive index along the phase-shift-controlled (PSC) parts was different from those of the side parts with the different currents injected into the PSC parts and the side parts. So the optical path length along the PSC part changed for the lasing wavelength. In other words, an appropriate distributed phase shift along the PSC part could be introduced accordingly. Besides, it is found in the results that the longitudinal photon density distribution of the proposed structure is much flatter than that of the λ/4 phase-shift structure. Hence, the longitudinal spatial hole burning (SHB) is reduced more effectively. The single longitudinal mode (SLM) stability is better than that of the common λ/4 phase-shift structure at high injection currents accordingly. A twelve-channel SBG MLA with 50-GHz wavelength spacing was fabricated in the experiment. The channel frequency ranges from 192.70 THz to 192.15 THz. Its operation at designed wavelengths was demonstrated. High side mode suppression ratios (SMSRs) of all channels over 57 dB were observed as well. This paves the way for a compact and cost-efficient light source for large-scale photonic integrated circuit devices.

Published in	American Journal of Optics and Photonics (Volume 10, Issue 4)
DOI	10.11648/j.ajop.20221004.11
Page(s)	23-28
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2022. Published by Science Publishing Group

Keywords

Multiwavelength Laser Array, Sampled Bragg Grating, Spatial Hole Burning

References

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APA Style

Renjia Guo, Jing Wu, Dikui Mei, Ping Wang, Lili Liu, et al. (2022). Monolithic Integration of a Multiwavelength Laser Array Associated with SBG Semiconductor Lasers. American Journal of Optics and Photonics, 10(4), 23-28. https://doi.org/10.11648/j.ajop.20221004.11

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ACS Style

Renjia Guo; Jing Wu; Dikui Mei; Ping Wang; Lili Liu, et al. Monolithic Integration of a Multiwavelength Laser Array Associated with SBG Semiconductor Lasers. Am. J. Opt. Photonics 2022, 10(4), 23-28. doi: 10.11648/j.ajop.20221004.11

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AMA Style

Renjia Guo, Jing Wu, Dikui Mei, Ping Wang, Lili Liu, et al. Monolithic Integration of a Multiwavelength Laser Array Associated with SBG Semiconductor Lasers. Am J Opt Photonics. 2022;10(4):23-28. doi: 10.11648/j.ajop.20221004.11

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@article{10.11648/j.ajop.20221004.11,
  author = {Renjia Guo and Jing Wu and Dikui Mei and Ping Wang and Lili Liu and Jichu Dong},
  title = {Monolithic Integration of a Multiwavelength Laser Array Associated with SBG Semiconductor Lasers},
  journal = {American Journal of Optics and Photonics},
  volume = {10},
  number = {4},
  pages = {23-28},
  doi = {10.11648/j.ajop.20221004.11},
  url = {https://doi.org/10.11648/j.ajop.20221004.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajop.20221004.11},
  abstract = {There are strong demands of monolithically integrated photonic components for future high capacity optical networks such as those for data center, fifth-generation fronthaul or wavelength-division multiplexing systems. Monolithically integrated multiwavelength laser array (MLA) is a potential photonic component used in the above applications. The monolithically integrated MLA associated with sampled Bragg grating (SBG) semiconductor lasers is proposed and studied here. It is shown in the results that a controllable phase shift can be introduced into the central part of the cavity to tune the lasing wavelength. The effective refractive index along the phase-shift-controlled (PSC) parts was different from those of the side parts with the different currents injected into the PSC parts and the side parts. So the optical path length along the PSC part changed for the lasing wavelength. In other words, an appropriate distributed phase shift along the PSC part could be introduced accordingly. Besides, it is found in the results that the longitudinal photon density distribution of the proposed structure is much flatter than that of the λ/4 phase-shift structure. Hence, the longitudinal spatial hole burning (SHB) is reduced more effectively. The single longitudinal mode (SLM) stability is better than that of the common λ/4 phase-shift structure at high injection currents accordingly. A twelve-channel SBG MLA with 50-GHz wavelength spacing was fabricated in the experiment. The channel frequency ranges from 192.70 THz to 192.15 THz. Its operation at designed wavelengths was demonstrated. High side mode suppression ratios (SMSRs) of all channels over 57 dB were observed as well. This paves the way for a compact and cost-efficient light source for large-scale photonic integrated circuit devices.},
 year = {2022}
}

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TY - JOUR
T1 - Monolithic Integration of a Multiwavelength Laser Array Associated with SBG Semiconductor Lasers
AU - Renjia Guo
AU - Jing Wu
AU - Dikui Mei
AU - Ping Wang
AU - Lili Liu
AU - Jichu Dong
Y1 - 2022/11/29
PY - 2022
N1 - https://doi.org/10.11648/j.ajop.20221004.11
DO - 10.11648/j.ajop.20221004.11
T2 - American Journal of Optics and Photonics
JF - American Journal of Optics and Photonics
JO - American Journal of Optics and Photonics
SP - 23
EP - 28
PB - Science Publishing Group
SN - 2330-8494
UR - https://doi.org/10.11648/j.ajop.20221004.11
AB - There are strong demands of monolithically integrated photonic components for future high capacity optical networks such as those for data center, fifth-generation fronthaul or wavelength-division multiplexing systems. Monolithically integrated multiwavelength laser array (MLA) is a potential photonic component used in the above applications. The monolithically integrated MLA associated with sampled Bragg grating (SBG) semiconductor lasers is proposed and studied here. It is shown in the results that a controllable phase shift can be introduced into the central part of the cavity to tune the lasing wavelength. The effective refractive index along the phase-shift-controlled (PSC) parts was different from those of the side parts with the different currents injected into the PSC parts and the side parts. So the optical path length along the PSC part changed for the lasing wavelength. In other words, an appropriate distributed phase shift along the PSC part could be introduced accordingly. Besides, it is found in the results that the longitudinal photon density distribution of the proposed structure is much flatter than that of the λ/4 phase-shift structure. Hence, the longitudinal spatial hole burning (SHB) is reduced more effectively. The single longitudinal mode (SLM) stability is better than that of the common λ/4 phase-shift structure at high injection currents accordingly. A twelve-channel SBG MLA with 50-GHz wavelength spacing was fabricated in the experiment. The channel frequency ranges from 192.70 THz to 192.15 THz. Its operation at designed wavelengths was demonstrated. High side mode suppression ratios (SMSRs) of all channels over 57 dB were observed as well. This paves the way for a compact and cost-efficient light source for large-scale photonic integrated circuit devices.
VL - 10
IS - 4
ER -

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Author Information

Renjia Guo

School of Physics and Electronic Engineering, Jiangsu Intelligent Optoelectronic Devices and Measurement and Control Engineering Research Center, Yancheng Teachers University, Yancheng, China
Jing Wu

School of Biological Science and Technology, Yangzhou University, Yangzhou, China
Dikui Mei

School of Physics and Electronic Engineering, Jiangsu Intelligent Optoelectronic Devices and Measurement and Control Engineering Research Center, Yancheng Teachers University, Yancheng, China
Ping Wang

Yancheng Tongji Automotive Parts Limited Corporation, Yancheng, China
Lili Liu

Jiangsu Tongji Analytical Instrument Limited Corporation, Yancheng, China
Jichu Dong

Yancheng Jinzhou Machinery Manufacturing Limited Corporation, Yancheng, China

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APA Style

Renjia Guo, Jing Wu, Dikui Mei, Ping Wang, Lili Liu, et al. (2022). Monolithic Integration of a Multiwavelength Laser Array Associated with SBG Semiconductor Lasers. American Journal of Optics and Photonics, 10(4), 23-28. https://doi.org/10.11648/j.ajop.20221004.11

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ACS Style

Renjia Guo; Jing Wu; Dikui Mei; Ping Wang; Lili Liu, et al. Monolithic Integration of a Multiwavelength Laser Array Associated with SBG Semiconductor Lasers. Am. J. Opt. Photonics 2022, 10(4), 23-28. doi: 10.11648/j.ajop.20221004.11

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AMA Style

Renjia Guo, Jing Wu, Dikui Mei, Ping Wang, Lili Liu, et al. Monolithic Integration of a Multiwavelength Laser Array Associated with SBG Semiconductor Lasers. Am J Opt Photonics. 2022;10(4):23-28. doi: 10.11648/j.ajop.20221004.11

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@article{10.11648/j.ajop.20221004.11,
  author = {Renjia Guo and Jing Wu and Dikui Mei and Ping Wang and Lili Liu and Jichu Dong},
  title = {Monolithic Integration of a Multiwavelength Laser Array Associated with SBG Semiconductor Lasers},
  journal = {American Journal of Optics and Photonics},
  volume = {10},
  number = {4},
  pages = {23-28},
  doi = {10.11648/j.ajop.20221004.11},
  url = {https://doi.org/10.11648/j.ajop.20221004.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajop.20221004.11},
  abstract = {There are strong demands of monolithically integrated photonic components for future high capacity optical networks such as those for data center, fifth-generation fronthaul or wavelength-division multiplexing systems. Monolithically integrated multiwavelength laser array (MLA) is a potential photonic component used in the above applications. The monolithically integrated MLA associated with sampled Bragg grating (SBG) semiconductor lasers is proposed and studied here. It is shown in the results that a controllable phase shift can be introduced into the central part of the cavity to tune the lasing wavelength. The effective refractive index along the phase-shift-controlled (PSC) parts was different from those of the side parts with the different currents injected into the PSC parts and the side parts. So the optical path length along the PSC part changed for the lasing wavelength. In other words, an appropriate distributed phase shift along the PSC part could be introduced accordingly. Besides, it is found in the results that the longitudinal photon density distribution of the proposed structure is much flatter than that of the λ/4 phase-shift structure. Hence, the longitudinal spatial hole burning (SHB) is reduced more effectively. The single longitudinal mode (SLM) stability is better than that of the common λ/4 phase-shift structure at high injection currents accordingly. A twelve-channel SBG MLA with 50-GHz wavelength spacing was fabricated in the experiment. The channel frequency ranges from 192.70 THz to 192.15 THz. Its operation at designed wavelengths was demonstrated. High side mode suppression ratios (SMSRs) of all channels over 57 dB were observed as well. This paves the way for a compact and cost-efficient light source for large-scale photonic integrated circuit devices.},
 year = {2022}
}

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