Thermal Annealing Effect on Optical and Electrical Properties of Zinc Selenide (ZnSe) Thin Films

Esubalew Yehualaw Melaku; Tizazu Abza Abshiro; Wubamlak Nigussie

doi:doi:10.11648/j.ajpa.20231102.12

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Thermal Annealing Effect on Optical and Electrical Properties of Zinc Selenide (ZnSe) Thin Films

Esubalew Yehualaw Melaku, Tizazu Abza Abshiro, Wubamlak Nigussie

Published in American Journal of Physics and Applications (Volume 11, Issue 2)

Received: 2 May 2023 Accepted: 2 June 2023 Published: 29 June 2023

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Abstract

The impact factor of ZnSe thin films in an aqueous solution of zinc acetate and hydrazine hydrate (HH) using the non-toxic complexing agent EDTA along with the films were annealed at 200, 300, and 400°C. This research aimed to employed XRD analysis, optical measurements, and electrical resistivity measurements to study the ZnSe thin films, respectively. The use of these complementary techniques allowed for a compressive understanding of the effect of annealing on the physical properties of the films. The ZnSe thin films are annealed in an oven at various temperatures which are characterized by structural and optical properties. An increase in annealing temperature distorted the nanocrystillinity and made the ZnSe thin films amorphous. The variation of resistivity indicates the semiconducting nature of the thin film. The electrical resistivity of the films decreases with increasing annealing temperature. In this study, the Band gap of ZnSe decreases from 2.8eV to 2.65eV with the increase in temperature and decreases for as-deposited to 2.5eV. As a result of this research ZnSe is used for certain applications, it has been widely utilized in various optoelectronic devices such as thin film solar cells, green-blue light emitting diodes, lasers, photo-luminescent, and electro-luminescent devices.

Published in	American Journal of Physics and Applications (Volume 11, Issue 2)
DOI	10.11648/j.ajpa.20231102.12
Page(s)	40-46
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Chemical Bath Deposition, ZnSe Thin Film, Band Gap, Solar Cells

References

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APA Style

Esubalew Yehualaw Melaku, Tizazu Abza Abshiro, Wubamlak Nigussie. (2023). Thermal Annealing Effect on Optical and Electrical Properties of Zinc Selenide (ZnSe) Thin Films. American Journal of Physics and Applications, 11(2), 40-46. https://doi.org/10.11648/j.ajpa.20231102.12

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ACS Style

Esubalew Yehualaw Melaku; Tizazu Abza Abshiro; Wubamlak Nigussie. Thermal Annealing Effect on Optical and Electrical Properties of Zinc Selenide (ZnSe) Thin Films. Am. J. Phys. Appl. 2023, 11(2), 40-46. doi: 10.11648/j.ajpa.20231102.12

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AMA Style

Esubalew Yehualaw Melaku, Tizazu Abza Abshiro, Wubamlak Nigussie. Thermal Annealing Effect on Optical and Electrical Properties of Zinc Selenide (ZnSe) Thin Films. Am J Phys Appl. 2023;11(2):40-46. doi: 10.11648/j.ajpa.20231102.12

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@article{10.11648/j.ajpa.20231102.12,
  author = {Esubalew Yehualaw Melaku and Tizazu Abza Abshiro and Wubamlak Nigussie},
  title = {Thermal Annealing Effect on Optical and Electrical Properties of Zinc Selenide (ZnSe) Thin Films},
  journal = {American Journal of Physics and Applications},
  volume = {11},
  number = {2},
  pages = {40-46},
  doi = {10.11648/j.ajpa.20231102.12},
  url = {https://doi.org/10.11648/j.ajpa.20231102.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajpa.20231102.12},
  abstract = {The impact factor of ZnSe thin films in an aqueous solution of zinc acetate and hydrazine hydrate (HH) using the non-toxic complexing agent EDTA along with the films were annealed at 200, 300, and 400°C. This research aimed to employed XRD analysis, optical measurements, and electrical resistivity measurements to study the ZnSe thin films, respectively. The use of these complementary techniques allowed for a compressive understanding of the effect of annealing on the physical properties of the films. The ZnSe thin films are annealed in an oven at various temperatures which are characterized by structural and optical properties. An increase in annealing temperature distorted the nanocrystillinity and made the ZnSe thin films amorphous. The variation of resistivity indicates the semiconducting nature of the thin film. The electrical resistivity of the films decreases with increasing annealing temperature. In this study, the Band gap of ZnSe decreases from 2.8eV to 2.65eV with the increase in temperature and decreases for as-deposited to 2.5eV. As a result of this research ZnSe is used for certain applications, it has been widely utilized in various optoelectronic devices such as thin film solar cells, green-blue light emitting diodes, lasers, photo-luminescent, and electro-luminescent devices.},
 year = {2023}
}

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TY  - JOUR
T1  - Thermal Annealing Effect on Optical and Electrical Properties of Zinc Selenide (ZnSe) Thin Films
AU  - Esubalew Yehualaw Melaku
AU  - Tizazu Abza Abshiro
AU  - Wubamlak Nigussie
Y1  - 2023/06/29
PY  - 2023
N1  - https://doi.org/10.11648/j.ajpa.20231102.12
DO  - 10.11648/j.ajpa.20231102.12
T2  - American Journal of Physics and Applications
JF  - American Journal of Physics and Applications
JO  - American Journal of Physics and Applications
SP  - 40
EP  - 46
PB  - Science Publishing Group
SN  - 2330-4308
UR  - https://doi.org/10.11648/j.ajpa.20231102.12
AB  - The impact factor of ZnSe thin films in an aqueous solution of zinc acetate and hydrazine hydrate (HH) using the non-toxic complexing agent EDTA along with the films were annealed at 200, 300, and 400°C. This research aimed to employed XRD analysis, optical measurements, and electrical resistivity measurements to study the ZnSe thin films, respectively. The use of these complementary techniques allowed for a compressive understanding of the effect of annealing on the physical properties of the films. The ZnSe thin films are annealed in an oven at various temperatures which are characterized by structural and optical properties. An increase in annealing temperature distorted the nanocrystillinity and made the ZnSe thin films amorphous. The variation of resistivity indicates the semiconducting nature of the thin film. The electrical resistivity of the films decreases with increasing annealing temperature. In this study, the Band gap of ZnSe decreases from 2.8eV to 2.65eV with the increase in temperature and decreases for as-deposited to 2.5eV. As a result of this research ZnSe is used for certain applications, it has been widely utilized in various optoelectronic devices such as thin film solar cells, green-blue light emitting diodes, lasers, photo-luminescent, and electro-luminescent devices.
VL  - 11
IS  - 2
ER  -

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Author Information

Esubalew Yehualaw Melaku

School of Natural and Computational Sciences, Hawassa University, Hawassa, Ethiopia
Tizazu Abza Abshiro

School of Natural and Computational Sciences, Hawassa University, Hawassa, Ethiopia
Wubamlak Nigussie

School of Earth Sciences, Bahir Dar University, Bahir Dar, Ethiopia

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APA Style

Esubalew Yehualaw Melaku, Tizazu Abza Abshiro, Wubamlak Nigussie. (2023). Thermal Annealing Effect on Optical and Electrical Properties of Zinc Selenide (ZnSe) Thin Films. American Journal of Physics and Applications, 11(2), 40-46. https://doi.org/10.11648/j.ajpa.20231102.12

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ACS Style

Esubalew Yehualaw Melaku; Tizazu Abza Abshiro; Wubamlak Nigussie. Thermal Annealing Effect on Optical and Electrical Properties of Zinc Selenide (ZnSe) Thin Films. Am. J. Phys. Appl. 2023, 11(2), 40-46. doi: 10.11648/j.ajpa.20231102.12

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AMA Style

Esubalew Yehualaw Melaku, Tizazu Abza Abshiro, Wubamlak Nigussie. Thermal Annealing Effect on Optical and Electrical Properties of Zinc Selenide (ZnSe) Thin Films. Am J Phys Appl. 2023;11(2):40-46. doi: 10.11648/j.ajpa.20231102.12

Copy | Download

@article{10.11648/j.ajpa.20231102.12,
  author = {Esubalew Yehualaw Melaku and Tizazu Abza Abshiro and Wubamlak Nigussie},
  title = {Thermal Annealing Effect on Optical and Electrical Properties of Zinc Selenide (ZnSe) Thin Films},
  journal = {American Journal of Physics and Applications},
  volume = {11},
  number = {2},
  pages = {40-46},
  doi = {10.11648/j.ajpa.20231102.12},
  url = {https://doi.org/10.11648/j.ajpa.20231102.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajpa.20231102.12},
  abstract = {The impact factor of ZnSe thin films in an aqueous solution of zinc acetate and hydrazine hydrate (HH) using the non-toxic complexing agent EDTA along with the films were annealed at 200, 300, and 400°C. This research aimed to employed XRD analysis, optical measurements, and electrical resistivity measurements to study the ZnSe thin films, respectively. The use of these complementary techniques allowed for a compressive understanding of the effect of annealing on the physical properties of the films. The ZnSe thin films are annealed in an oven at various temperatures which are characterized by structural and optical properties. An increase in annealing temperature distorted the nanocrystillinity and made the ZnSe thin films amorphous. The variation of resistivity indicates the semiconducting nature of the thin film. The electrical resistivity of the films decreases with increasing annealing temperature. In this study, the Band gap of ZnSe decreases from 2.8eV to 2.65eV with the increase in temperature and decreases for as-deposited to 2.5eV. As a result of this research ZnSe is used for certain applications, it has been widely utilized in various optoelectronic devices such as thin film solar cells, green-blue light emitting diodes, lasers, photo-luminescent, and electro-luminescent devices.},
 year = {2023}
}

Copy | Download

TY  - JOUR
T1  - Thermal Annealing Effect on Optical and Electrical Properties of Zinc Selenide (ZnSe) Thin Films
AU  - Esubalew Yehualaw Melaku
AU  - Tizazu Abza Abshiro
AU  - Wubamlak Nigussie
Y1  - 2023/06/29
PY  - 2023
N1  - https://doi.org/10.11648/j.ajpa.20231102.12
DO  - 10.11648/j.ajpa.20231102.12
T2  - American Journal of Physics and Applications
JF  - American Journal of Physics and Applications
JO  - American Journal of Physics and Applications
SP  - 40
EP  - 46
PB  - Science Publishing Group
SN  - 2330-4308
UR  - https://doi.org/10.11648/j.ajpa.20231102.12
AB  - The impact factor of ZnSe thin films in an aqueous solution of zinc acetate and hydrazine hydrate (HH) using the non-toxic complexing agent EDTA along with the films were annealed at 200, 300, and 400°C. This research aimed to employed XRD analysis, optical measurements, and electrical resistivity measurements to study the ZnSe thin films, respectively. The use of these complementary techniques allowed for a compressive understanding of the effect of annealing on the physical properties of the films. The ZnSe thin films are annealed in an oven at various temperatures which are characterized by structural and optical properties. An increase in annealing temperature distorted the nanocrystillinity and made the ZnSe thin films amorphous. The variation of resistivity indicates the semiconducting nature of the thin film. The electrical resistivity of the films decreases with increasing annealing temperature. In this study, the Band gap of ZnSe decreases from 2.8eV to 2.65eV with the increase in temperature and decreases for as-deposited to 2.5eV. As a result of this research ZnSe is used for certain applications, it has been widely utilized in various optoelectronic devices such as thin film solar cells, green-blue light emitting diodes, lasers, photo-luminescent, and electro-luminescent devices.
VL  - 11
IS  - 2
ER  -

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