Study of the Electrons Density in the Base of the Parallel Vertical Junction Solar Cell Under the Influence of the Temperature

Nfally Dieme

doi:doi:10.11648/j.ajop.20150301.13

| Peer-Reviewed

Study of the Electrons Density in the Base of the Parallel Vertical Junction Solar Cell Under the Influence of the Temperature

Nfally Dieme

Published in American Journal of Optics and Photonics (Volume 3, Issue 1)

Received: 10 July 2015 Accepted: 22 July 2015 Published: 29 July 2015

Views: Downloads:

Download PDF

Share This Article

Twitter
Linked In
Facebook

Abstract

This work is a theoretical study of a parallel vertical junction solar cell under multispectral illumination in static regime. The expression for the density of the minority carriers in excess (electrons) in the base is determined from the equation of continuity. It's an equation that takes into account the process of generation of the charge carriers, the process of diffusion of these carriers and their processes of recombination process. The aim of this work is to study the evolution of this density depending on temperature and its distribution in depth following x and the thickness z in the base for different values of the temperature.

Published in	American Journal of Optics and Photonics (Volume 3, Issue 1)
DOI	10.11648/j.ajop.20150301.13
Page(s)	13-16
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2015. Published by Science Publishing Group

Keywords

Vertical Junction, Electron’S Density, Temperature, Thickness z – Base, Depth x

References

[1]	K. Agroui, Etude du Comportement Thermique de Modules Photovoltaïques de Technologie Monoverre et Biverre au Silicium Cristallin, Rev. Energ. Ren. : Valorisation, pp. 7-11, (1999).
[2]	Nf. Dieme, et al., Influence of Temperature on the Electrical Parameters of a Vertical Parallel Junction Silicon Solar Cell under Polychromatic Illumination in Steady State, Res.J. App. Sci., Eng. and Technology, vol. 7, 2559-2562,( 2014)
[3]	Francis Levy, Traité des matériaux 18: Physique et technologie des semi-conducteurs, Presses Polytechniques et Universitaires Romandes, (1995).
[4]	Ly Diallo, H., B. Dieng, I. Ly, M.M. Dione, A. Wereme, M. Ndiaye and G. Sissoko, Determination of the recombination and electrical parameters of a vertical multijunction silicon solar cell. Res. J. Appl. Sci. Eng. Technol., 4 2626-2631. (2012)
[5]	A. Thiam, M. Zoungrana, H. Ly Diallo, A Diao, N. Thiam, S. Gueye, M.M. Deme, M. Sarr and G. Sissoko, Influence of Incident Illumination Angle on Capacitance of a Silicon Solar Cell under Frequency Modulation, Res.J. App. Sci., Eng. and Technology, 5 1123-1128 (2013)
[6]	Dieme Nf study of the performance of a parallel vertical junction Silicon solar cell under thermal influence, Asian Academic Research Journal of Multidisciplinary, 2 2319 – 280. (2015)
[7]	M. Sane, M. Zoungrana, H. L. Diallo, G. Sahin, N. Thiam,M. Ndiaye, M. Dieng, G. Sissoko, Influence of Incidence Angle on the Electrical Parameters of a vertical Silicon Solar Cell under Frequency Modulation, International Journal of Inventive Engineering and Sciences (IJIES) 1 2319–9598. (2013)
[8]	S. M. Sze, Kwok K. Ng, Physics of Semiconductor Devices, Third Edition, John Wiley & Sons, (2007).
[9]	Roland Pässler, Semi-empirical descriptions of temperature dependences of band gaps in semiconductors, phys. stat. sol. vol 3,, pp.710–728 (2003)
[10]	S. Valkov, Electronique analogique, Edition Castéilla, Collection A.CAPLIEZ, (1994).

Cite This Article

Plain Text BibTeX RIS

APA Style

Nfally Dieme. (2015). Study of the Electrons Density in the Base of the Parallel Vertical Junction Solar Cell Under the Influence of the Temperature. American Journal of Optics and Photonics, 3(1), 13-16. https://doi.org/10.11648/j.ajop.20150301.13

Copy | Download

ACS Style

Nfally Dieme. Study of the Electrons Density in the Base of the Parallel Vertical Junction Solar Cell Under the Influence of the Temperature. Am. J. Opt. Photonics 2015, 3(1), 13-16. doi: 10.11648/j.ajop.20150301.13

Copy | Download

AMA Style

Nfally Dieme. Study of the Electrons Density in the Base of the Parallel Vertical Junction Solar Cell Under the Influence of the Temperature. Am J Opt Photonics. 2015;3(1):13-16. doi: 10.11648/j.ajop.20150301.13

Copy | Download

@article{10.11648/j.ajop.20150301.13,
  author = {Nfally Dieme},
  title = {Study of the Electrons Density in the Base of the Parallel Vertical Junction Solar Cell Under the Influence of the Temperature},
  journal = {American Journal of Optics and Photonics},
  volume = {3},
  number = {1},
  pages = {13-16},
  doi = {10.11648/j.ajop.20150301.13},
  url = {https://doi.org/10.11648/j.ajop.20150301.13},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajop.20150301.13},
  abstract = {This work is a theoretical study of a parallel vertical junction solar cell under multispectral illumination in static regime. The expression for the density of the minority carriers in excess (electrons) in the base is determined from the equation of continuity. It's an equation that takes into account the process of generation of the charge carriers, the process of diffusion of these carriers and their processes of recombination process. The aim of this work is to study the evolution of this density depending on temperature and its distribution in depth following x and the thickness z in the base for different values of the temperature.},
 year = {2015}
}

Copy | Download

TY  - JOUR
T1  - Study of the Electrons Density in the Base of the Parallel Vertical Junction Solar Cell Under the Influence of the Temperature
AU  - Nfally Dieme
Y1  - 2015/07/29
PY  - 2015
N1  - https://doi.org/10.11648/j.ajop.20150301.13
DO  - 10.11648/j.ajop.20150301.13
T2  - American Journal of Optics and Photonics
JF  - American Journal of Optics and Photonics
JO  - American Journal of Optics and Photonics
SP  - 13
EP  - 16
PB  - Science Publishing Group
SN  - 2330-8494
UR  - https://doi.org/10.11648/j.ajop.20150301.13
AB  - This work is a theoretical study of a parallel vertical junction solar cell under multispectral illumination in static regime. The expression for the density of the minority carriers in excess (electrons) in the base is determined from the equation of continuity. It's an equation that takes into account the process of generation of the charge carriers, the process of diffusion of these carriers and their processes of recombination process. The aim of this work is to study the evolution of this density depending on temperature and its distribution in depth following x and the thickness z in the base for different values of the temperature.
VL  - 3
IS  - 1
ER  -

Copy | Download

Author Information

Nfally Dieme

Physics Department, Faculty of Science and Technology, Laboratory of Semiconductors and Solar Energy, University Cheikh Anta Diop, Dakar, Senegal

Download PDF

Sections

Plain Text BibTeX RIS

APA Style

Nfally Dieme. (2015). Study of the Electrons Density in the Base of the Parallel Vertical Junction Solar Cell Under the Influence of the Temperature. American Journal of Optics and Photonics, 3(1), 13-16. https://doi.org/10.11648/j.ajop.20150301.13

Copy | Download

ACS Style

Nfally Dieme. Study of the Electrons Density in the Base of the Parallel Vertical Junction Solar Cell Under the Influence of the Temperature. Am. J. Opt. Photonics 2015, 3(1), 13-16. doi: 10.11648/j.ajop.20150301.13

Copy | Download

AMA Style

Nfally Dieme. Study of the Electrons Density in the Base of the Parallel Vertical Junction Solar Cell Under the Influence of the Temperature. Am J Opt Photonics. 2015;3(1):13-16. doi: 10.11648/j.ajop.20150301.13

Copy | Download

@article{10.11648/j.ajop.20150301.13,
  author = {Nfally Dieme},
  title = {Study of the Electrons Density in the Base of the Parallel Vertical Junction Solar Cell Under the Influence of the Temperature},
  journal = {American Journal of Optics and Photonics},
  volume = {3},
  number = {1},
  pages = {13-16},
  doi = {10.11648/j.ajop.20150301.13},
  url = {https://doi.org/10.11648/j.ajop.20150301.13},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajop.20150301.13},
  abstract = {This work is a theoretical study of a parallel vertical junction solar cell under multispectral illumination in static regime. The expression for the density of the minority carriers in excess (electrons) in the base is determined from the equation of continuity. It's an equation that takes into account the process of generation of the charge carriers, the process of diffusion of these carriers and their processes of recombination process. The aim of this work is to study the evolution of this density depending on temperature and its distribution in depth following x and the thickness z in the base for different values of the temperature.},
 year = {2015}
}

Copy | Download

TY  - JOUR
T1  - Study of the Electrons Density in the Base of the Parallel Vertical Junction Solar Cell Under the Influence of the Temperature
AU  - Nfally Dieme
Y1  - 2015/07/29
PY  - 2015
N1  - https://doi.org/10.11648/j.ajop.20150301.13
DO  - 10.11648/j.ajop.20150301.13
T2  - American Journal of Optics and Photonics
JF  - American Journal of Optics and Photonics
JO  - American Journal of Optics and Photonics
SP  - 13
EP  - 16
PB  - Science Publishing Group
SN  - 2330-8494
UR  - https://doi.org/10.11648/j.ajop.20150301.13
AB  - This work is a theoretical study of a parallel vertical junction solar cell under multispectral illumination in static regime. The expression for the density of the minority carriers in excess (electrons) in the base is determined from the equation of continuity. It's an equation that takes into account the process of generation of the charge carriers, the process of diffusion of these carriers and their processes of recombination process. The aim of this work is to study the evolution of this density depending on temperature and its distribution in depth following x and the thickness z in the base for different values of the temperature.
VL  - 3
IS  - 1
ER  -

Copy | Download