The morphological, structural and photoluminescence (PL) of laser ablated SrAl2O4:Eu2+, Dy3+ thin films deposited on optimum substrate temperature range of 200-500°C are reported. The 200-500°C substrate temperature was considered, since on that range, low cost highly emitting SrAl2O4:Eu2+, Dy3+ thin films are always produced. The surface morphology analysis of the films was done by using the scanning electron microscopy (SEM) and atomic force microscopy (AFM). The energy dispersive X-ray spectrometer (EDS) was employed for elemental composition analysis. The structural analysis was done by the X-ray diffraction (XRD) technique. The photoluminescence (PL) data collection was done by using Cary Eclipse fluorescence spectrophotometry. The films were excited by the UV light from the xenon lamp. The highest green emission intensity with a peak at 517 nm and highest initial afterglow intensity were recorded by the sample that was deposited at 350°C. The green peak at 517 nm is attributed to 4f65d1 → 4f7 Eu2+ transitions. AFM images with well defined grains were observed on the films deposited at temperatures higher than 200°C. The EDS elemental composition analysis showed that the films consist of all the main elements of SrAl2O4:Eu2+, Dy3+, i.e., Al, Sr, O. The changes in the film photoluminescence and morphology with the substrate temperature are discussed.
Published in | American Journal of Optics and Photonics (Volume 6, Issue 1) |
DOI | 10.11648/j.ajop.20180601.11 |
Page(s) | 1-7 |
Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
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Copyright © The Author(s), 2018. Published by Science Publishing Group |
SrAl2O4:Eu2+, Dy3+, SEM, AFM, Thin Film, Substrate Temperature, PL
[1] | O. M. Ntwaeaborwa, P. D. Nsimama, J. T. Abiade, E. Coetsee and H. C Swart. (2009). The effects of substrate temperature on the structure, morphology and photoluminescence properties of pulsed laser deposited SrAl2O4: Eu2+, Dy3+ thin films. Physica B 404, 4436-4439. |
[2] | Patrick D. Nsimama, O. M. Ntwaeaborwa and H. C. Swart, (2015). The XPS, depth profile analysis and photoluminescence studies of pulsed laser deposited SrAl2O4: Eu2+, Dy3+thin films prepared using different laser fluencies. International Journal of Scientific & Engineering Research, 6, 1-16. |
[3] | P. D. Nsimama, (2016). The influence of oxygen pressure on the Photoluminescent properties of pulsed laser ablated SrAl2O4: Eu2+, Dy3+ thin film. American Journal of Optics and Photonics, 4, 25-31. |
[4] | A. H. Wako, F. B. Dejene, H. C Swart, (2015). Structural and luminescence properties of SrAl2O4: Eu2+, Dy3+, Nd3+ phosphor thin films grown by pulsed laser deposition. Physica B, 480, 116-124. |
[5] | Sang-Do Han et al. Sang-Do Han, Krishan C. Singh, Tai-Yeon Cho, Hak-Soo Lee Devender Jakhar, John P. Hulme, Chi-Hwan Han, Jung-Duk Kim, Il-Su Chun, Jihye Gwak. (2008). Preparation and characterization of long persistence strontium aluminate phosphor. J of Luminescence, 128, 301-305. |
[6] | Amalia Mesaros-Hristea, Oscar Alm, Elisabeth-Jeanne Popovici, Mats Boman, (2008). Luminescent thin films of nanocrystalline YTaO4: Nb by pulsed laser deposition. Thin Solid Films, 516, 8431-8435. |
[7] | X. M. Fan, J. S. Lian, Z. X. Guo, H. J. Lu (2005). Microstructure and photoluminescence properties of ZnO thin films grown by PLD on Si (1 1 1) substrates. Appl. Surf. Sci. 239, 176-181. |
[8] | S. Christoulakis, M. Suchea, N. Katsarakis, E. Koudoumas (2007). Europium and samarium doped calcisum sulfide thin films grown by PLD. Applied Surface Science 253, 8169-8173. |
[9] | Belekar R. M., Sawadh P. S, Mahadule R. K., Theng P. A, (2015). Luminescence studies of rare earth (Europium) doped nano-crystalline strontium aluminate materials (SrAl2O4: Eu2+) International Journal of Advances in Science Engineering and Technology, Special issue-2015, 163-166. |
[10] | Jung Hyun Jeong, Hyun Kyoung Yang, Kyoo Sung Shim, Ye Ran Jeong, Byung Kee Moon, Byung Chun Choi, Jong Seong Bae, Soung Soo Yi, Jung Hwan Kim, (2007). Li doping effect on the luminescent characteristics of YVO4: Eu3+ thin films grown by pulsed laser deposition. Appl. Surf. Sci. 253, 8273-8277. |
[11] | Robert Eason, Pulsed laser deposition of thin films applications-led growth of functional materials, Wiley Interscience, 2006. |
[12] | C. B. Wang, R. Tu, T. Goto, Q. Shen, L. M. Zhang, (2009). Structural and optical properties of BaTi2O5 thin films prepared by pulsed laser deposition at different substrate temperatures. Materials Chemistry and Physics, 113, 130-134. |
[13] | Soung-Soo Yi, Jong Seong Bae, Byung Chun Choi, Kyoo Sung Shim, Hyun Kyoung Yang, Byung Kee Moon, Jung Hyun Jeong, Jung Hwan Kim (2006). Surface morphology and photoluminescence characteristics of Eu-doped YVO4 thin films. Optical materials, 28, 703-708. |
[14] | M. Liu, X. Q. Wei, Z. G. Zhang, G. Sun, C. S. Chen, C. S. Xue, H. Z. Zhuang, B. Y. Man, (2006). Effect of temperature on pulsed laser deposition of ZnO films. Appl. Surf. Sci., 252, 4321-4326. |
[15] | P. D Nsimama, (2011). Photoluminescence properties of SrAl2O4: Eu2+, Dy3+ thin films ablated at different base pressures. Tanzania Journal of Natural and Applied Sciences, 2, 251-161. |
[16] | K. Sato, S. Komuro, T. Morikawa, H. Aizawa, T. Katsumataa, S. Harakob, X. Zhao, (2005). Long afterglow characteristics of thin film phosphor fabricated by laser ablation. J. Crys. Growth 275 e 1137-e1141. |
[17] | P. D. Nsimama, O. M. Ntwaeaborwa, H. C. Swart, (2011). The effect of different gas atmospheres on luminescent properties of pulsed laser ablated SrAl2O4: Eu2+, Dy3+ thin films. Journal of Luminescence, 131, 119-125. |
APA Style
Patrick Damson Nsimama. (2018). Characterization of Laser Ablated SrAl2O4:Eu2+, Dy3+ Thin Films Deposited on the Optimum Substrate Temperature Range. American Journal of Optics and Photonics, 6(1), 1-7. https://doi.org/10.11648/j.ajop.20180601.11
ACS Style
Patrick Damson Nsimama. Characterization of Laser Ablated SrAl2O4:Eu2+, Dy3+ Thin Films Deposited on the Optimum Substrate Temperature Range. Am. J. Opt. Photonics 2018, 6(1), 1-7. doi: 10.11648/j.ajop.20180601.11
AMA Style
Patrick Damson Nsimama. Characterization of Laser Ablated SrAl2O4:Eu2+, Dy3+ Thin Films Deposited on the Optimum Substrate Temperature Range. Am J Opt Photonics. 2018;6(1):1-7. doi: 10.11648/j.ajop.20180601.11
@article{10.11648/j.ajop.20180601.11, author = {Patrick Damson Nsimama}, title = {Characterization of Laser Ablated SrAl2O4:Eu2+, Dy3+ Thin Films Deposited on the Optimum Substrate Temperature Range}, journal = {American Journal of Optics and Photonics}, volume = {6}, number = {1}, pages = {1-7}, doi = {10.11648/j.ajop.20180601.11}, url = {https://doi.org/10.11648/j.ajop.20180601.11}, eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajop.20180601.11}, abstract = {The morphological, structural and photoluminescence (PL) of laser ablated SrAl2O4:Eu2+, Dy3+ thin films deposited on optimum substrate temperature range of 200-500°C are reported. The 200-500°C substrate temperature was considered, since on that range, low cost highly emitting SrAl2O4:Eu2+, Dy3+ thin films are always produced. The surface morphology analysis of the films was done by using the scanning electron microscopy (SEM) and atomic force microscopy (AFM). The energy dispersive X-ray spectrometer (EDS) was employed for elemental composition analysis. The structural analysis was done by the X-ray diffraction (XRD) technique. The photoluminescence (PL) data collection was done by using Cary Eclipse fluorescence spectrophotometry. The films were excited by the UV light from the xenon lamp. The highest green emission intensity with a peak at 517 nm and highest initial afterglow intensity were recorded by the sample that was deposited at 350°C. The green peak at 517 nm is attributed to 4f65d1 → 4f7 Eu2+ transitions. AFM images with well defined grains were observed on the films deposited at temperatures higher than 200°C. The EDS elemental composition analysis showed that the films consist of all the main elements of SrAl2O4:Eu2+, Dy3+, i.e., Al, Sr, O. The changes in the film photoluminescence and morphology with the substrate temperature are discussed.}, year = {2018} }
TY - JOUR T1 - Characterization of Laser Ablated SrAl2O4:Eu2+, Dy3+ Thin Films Deposited on the Optimum Substrate Temperature Range AU - Patrick Damson Nsimama Y1 - 2018/01/16 PY - 2018 N1 - https://doi.org/10.11648/j.ajop.20180601.11 DO - 10.11648/j.ajop.20180601.11 T2 - American Journal of Optics and Photonics JF - American Journal of Optics and Photonics JO - American Journal of Optics and Photonics SP - 1 EP - 7 PB - Science Publishing Group SN - 2330-8494 UR - https://doi.org/10.11648/j.ajop.20180601.11 AB - The morphological, structural and photoluminescence (PL) of laser ablated SrAl2O4:Eu2+, Dy3+ thin films deposited on optimum substrate temperature range of 200-500°C are reported. The 200-500°C substrate temperature was considered, since on that range, low cost highly emitting SrAl2O4:Eu2+, Dy3+ thin films are always produced. The surface morphology analysis of the films was done by using the scanning electron microscopy (SEM) and atomic force microscopy (AFM). The energy dispersive X-ray spectrometer (EDS) was employed for elemental composition analysis. The structural analysis was done by the X-ray diffraction (XRD) technique. The photoluminescence (PL) data collection was done by using Cary Eclipse fluorescence spectrophotometry. The films were excited by the UV light from the xenon lamp. The highest green emission intensity with a peak at 517 nm and highest initial afterglow intensity were recorded by the sample that was deposited at 350°C. The green peak at 517 nm is attributed to 4f65d1 → 4f7 Eu2+ transitions. AFM images with well defined grains were observed on the films deposited at temperatures higher than 200°C. The EDS elemental composition analysis showed that the films consist of all the main elements of SrAl2O4:Eu2+, Dy3+, i.e., Al, Sr, O. The changes in the film photoluminescence and morphology with the substrate temperature are discussed. VL - 6 IS - 1 ER -