Evaluating of Simulating the Transportation of Electron in Intelligent Information Systems and High-Tech Applicants

Afroditi Skafida; Katherina Dalaka

doi:doi:10.11648/j.ns.20190401.12

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Evaluating of Simulating the Transportation of Electron in Intelligent Information Systems and High-Tech Applicants

Afroditi Skafida, Katherina Dalaka

Published in Nuclear Science (Volume 4, Issue 1)

Received: 23 March 2019 Accepted: 25 June 2019 Published: 9 July 2019

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Abstract

The interest to study electron transport in semiconductor devices at very high electric field has been increased in the last decades and assessment of Monte Carlo simulation of electron transport in ZnO diode in intelligent information systems is of high significance. The Monte Carlo method as applied to semiconductor transport is a simulation of the trajectories of individual Carriers as they move through a device under the influence of external forces and subject to random scattering events. Monte Carlo simulation is performed to study quasi-ballistic transport of electrons in n⁺nn⁺ ZnO diode. In this simulation, the spatial motion of the electrons is semi classical and the scattering mechanisms taken into account are those due to acoustic phonons, non-polar optical phonons, polar optical phonons and ionized impurities. The simulation results are reported for different temperatures and voltages. It is also found that the transient properties of ZnO-made diode are not much sensitive to environment temperature changes, and thus the use of this substance is highly recommended in manufacture of electronic equipment.

Published in	Nuclear Science (Volume 4, Issue 1)
DOI	10.11648/j.ns.20190401.12
Page(s)	6-10
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2019. Published by Science Publishing Group

Keywords

Ensemble Monte Carlo, Ellipsoidal Valleys, Brillouin Zone, Drift Velocity

References

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APA Style

Afroditi Skafida, Katherina Dalaka. (2019). Evaluating of Simulating the Transportation of Electron in Intelligent Information Systems and High-Tech Applicants. Nuclear Science, 4(1), 6-10. https://doi.org/10.11648/j.ns.20190401.12

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ACS Style

Afroditi Skafida; Katherina Dalaka. Evaluating of Simulating the Transportation of Electron in Intelligent Information Systems and High-Tech Applicants. Nucl. Sci. 2019, 4(1), 6-10. doi: 10.11648/j.ns.20190401.12

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AMA Style

Afroditi Skafida, Katherina Dalaka. Evaluating of Simulating the Transportation of Electron in Intelligent Information Systems and High-Tech Applicants. Nucl Sci. 2019;4(1):6-10. doi: 10.11648/j.ns.20190401.12

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@article{10.11648/j.ns.20190401.12,
  author = {Afroditi Skafida and Katherina Dalaka},
  title = {Evaluating of Simulating the Transportation of Electron in Intelligent Information Systems and High-Tech Applicants},
  journal = {Nuclear Science},
  volume = {4},
  number = {1},
  pages = {6-10},
  doi = {10.11648/j.ns.20190401.12},
  url = {https://doi.org/10.11648/j.ns.20190401.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ns.20190401.12},
  abstract = {The interest to study electron transport in semiconductor devices at very high electric field has been increased in the last decades and assessment of Monte Carlo simulation of electron transport in ZnO diode in intelligent information systems is of high significance. The Monte Carlo method as applied to semiconductor transport is a simulation of the trajectories of individual Carriers as they move through a device under the influence of external forces and subject to random scattering events. Monte Carlo simulation is performed to study quasi-ballistic transport of electrons in n+nn+ ZnO diode. In this simulation, the spatial motion of the electrons is semi classical and the scattering mechanisms taken into account are those due to acoustic phonons, non-polar optical phonons, polar optical phonons and ionized impurities. The simulation results are reported for different temperatures and voltages. It is also found that the transient properties of ZnO-made diode are not much sensitive to environment temperature changes, and thus the use of this substance is highly recommended in manufacture of electronic equipment.},
 year = {2019}
}

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TY  - JOUR
T1  - Evaluating of Simulating the Transportation of Electron in Intelligent Information Systems and High-Tech Applicants
AU  - Afroditi Skafida
AU  - Katherina Dalaka
Y1  - 2019/07/09
PY  - 2019
N1  - https://doi.org/10.11648/j.ns.20190401.12
DO  - 10.11648/j.ns.20190401.12
T2  - Nuclear Science
JF  - Nuclear Science
JO  - Nuclear Science
SP  - 6
EP  - 10
PB  - Science Publishing Group
SN  - 2640-4346
UR  - https://doi.org/10.11648/j.ns.20190401.12
AB  - The interest to study electron transport in semiconductor devices at very high electric field has been increased in the last decades and assessment of Monte Carlo simulation of electron transport in ZnO diode in intelligent information systems is of high significance. The Monte Carlo method as applied to semiconductor transport is a simulation of the trajectories of individual Carriers as they move through a device under the influence of external forces and subject to random scattering events. Monte Carlo simulation is performed to study quasi-ballistic transport of electrons in n+nn+ ZnO diode. In this simulation, the spatial motion of the electrons is semi classical and the scattering mechanisms taken into account are those due to acoustic phonons, non-polar optical phonons, polar optical phonons and ionized impurities. The simulation results are reported for different temperatures and voltages. It is also found that the transient properties of ZnO-made diode are not much sensitive to environment temperature changes, and thus the use of this substance is highly recommended in manufacture of electronic equipment.
VL  - 4
IS  - 1
ER  -

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Author Information

Afroditi Skafida

Department of Electrical Engineering, University of Ohio, Ohio, USA
Katherina Dalaka

Department of Electrical Engineering, University of Athena, Athena, Greece

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APA Style

Afroditi Skafida, Katherina Dalaka. (2019). Evaluating of Simulating the Transportation of Electron in Intelligent Information Systems and High-Tech Applicants. Nuclear Science, 4(1), 6-10. https://doi.org/10.11648/j.ns.20190401.12

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ACS Style

Afroditi Skafida; Katherina Dalaka. Evaluating of Simulating the Transportation of Electron in Intelligent Information Systems and High-Tech Applicants. Nucl. Sci. 2019, 4(1), 6-10. doi: 10.11648/j.ns.20190401.12

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AMA Style

Afroditi Skafida, Katherina Dalaka. Evaluating of Simulating the Transportation of Electron in Intelligent Information Systems and High-Tech Applicants. Nucl Sci. 2019;4(1):6-10. doi: 10.11648/j.ns.20190401.12

Copy | Download

@article{10.11648/j.ns.20190401.12,
  author = {Afroditi Skafida and Katherina Dalaka},
  title = {Evaluating of Simulating the Transportation of Electron in Intelligent Information Systems and High-Tech Applicants},
  journal = {Nuclear Science},
  volume = {4},
  number = {1},
  pages = {6-10},
  doi = {10.11648/j.ns.20190401.12},
  url = {https://doi.org/10.11648/j.ns.20190401.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ns.20190401.12},
  abstract = {The interest to study electron transport in semiconductor devices at very high electric field has been increased in the last decades and assessment of Monte Carlo simulation of electron transport in ZnO diode in intelligent information systems is of high significance. The Monte Carlo method as applied to semiconductor transport is a simulation of the trajectories of individual Carriers as they move through a device under the influence of external forces and subject to random scattering events. Monte Carlo simulation is performed to study quasi-ballistic transport of electrons in n+nn+ ZnO diode. In this simulation, the spatial motion of the electrons is semi classical and the scattering mechanisms taken into account are those due to acoustic phonons, non-polar optical phonons, polar optical phonons and ionized impurities. The simulation results are reported for different temperatures and voltages. It is also found that the transient properties of ZnO-made diode are not much sensitive to environment temperature changes, and thus the use of this substance is highly recommended in manufacture of electronic equipment.},
 year = {2019}
}

Copy | Download

TY  - JOUR
T1  - Evaluating of Simulating the Transportation of Electron in Intelligent Information Systems and High-Tech Applicants
AU  - Afroditi Skafida
AU  - Katherina Dalaka
Y1  - 2019/07/09
PY  - 2019
N1  - https://doi.org/10.11648/j.ns.20190401.12
DO  - 10.11648/j.ns.20190401.12
T2  - Nuclear Science
JF  - Nuclear Science
JO  - Nuclear Science
SP  - 6
EP  - 10
PB  - Science Publishing Group
SN  - 2640-4346
UR  - https://doi.org/10.11648/j.ns.20190401.12
AB  - The interest to study electron transport in semiconductor devices at very high electric field has been increased in the last decades and assessment of Monte Carlo simulation of electron transport in ZnO diode in intelligent information systems is of high significance. The Monte Carlo method as applied to semiconductor transport is a simulation of the trajectories of individual Carriers as they move through a device under the influence of external forces and subject to random scattering events. Monte Carlo simulation is performed to study quasi-ballistic transport of electrons in n+nn+ ZnO diode. In this simulation, the spatial motion of the electrons is semi classical and the scattering mechanisms taken into account are those due to acoustic phonons, non-polar optical phonons, polar optical phonons and ionized impurities. The simulation results are reported for different temperatures and voltages. It is also found that the transient properties of ZnO-made diode are not much sensitive to environment temperature changes, and thus the use of this substance is highly recommended in manufacture of electronic equipment.
VL  - 4
IS  - 1
ER  -

Copy | Download