Linearity Test for Harshaw TLD (Type: TLD-100H) Base on Individual Calibration Method
Luay Abdulsahib Rasool,
Naashat Raheem Al-Ataby,
Alaa Fadil Hashim
Issue:
Volume 4, Issue 1, March 2019
Pages:
1-5
Received:
7 April 2019
Accepted:
23 May 2019
Published:
11 June 2019
Abstract: The testing of the individual monitoring instruments is important to demonstrate the performance of the instruments to give accurate measurements in workplace environment. In this research, 18 Thermoluminescence dosimetry (TLD) units were calibrated individually at surface water phantom and exposed with 60Co source at block 32 in Malaysia Nuclear Agency. The TLD were exposed at 5.00 meter distance from the source. The exposed TLD in terms of Personal Dose Equivalent at 10mm depth tissue, (Hp (10)) equal to 2.00mSv. The exposed TLD then be measured using winRems software from Harshaw TLD reader 6600 plus for defining the calibration factor in term of mSv/nC. After that all the 18 unit TLD were tested using linearity testing method and 18 TLD units were exposed with different dose that were 1mSv, 5mSv, 7mSv, 10mSv, 15mSv, and 20mSv. The research is conducted to satisfy two main objectives which was to obtain linear regression coefficient R2 ~ 1 and to show that the ratio of measured value over standard values are within ICRP trumpet acceptance limit curve, which are within (-33% to +50%).
Abstract: The testing of the individual monitoring instruments is important to demonstrate the performance of the instruments to give accurate measurements in workplace environment. In this research, 18 Thermoluminescence dosimetry (TLD) units were calibrated individually at surface water phantom and exposed with 60Co source at block 32 in Malaysia Nuclear A...
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Evaluating of Simulating the Transportation of Electron in Intelligent Information Systems and High-Tech Applicants
Afroditi Skafida,
Katherina Dalaka
Issue:
Volume 4, Issue 1, March 2019
Pages:
6-10
Received:
23 March 2019
Accepted:
25 June 2019
Published:
9 July 2019
Abstract: The interest to study electron transport in semiconductor devices at very high electric field has been increased in the last decades and assessment of Monte Carlo simulation of electron transport in ZnO diode in intelligent information systems is of high significance. The Monte Carlo method as applied to semiconductor transport is a simulation of the trajectories of individual Carriers as they move through a device under the influence of external forces and subject to random scattering events. Monte Carlo simulation is performed to study quasi-ballistic transport of electrons in n+nn+ ZnO diode. In this simulation, the spatial motion of the electrons is semi classical and the scattering mechanisms taken into account are those due to acoustic phonons, non-polar optical phonons, polar optical phonons and ionized impurities. The simulation results are reported for different temperatures and voltages. It is also found that the transient properties of ZnO-made diode are not much sensitive to environment temperature changes, and thus the use of this substance is highly recommended in manufacture of electronic equipment.
Abstract: The interest to study electron transport in semiconductor devices at very high electric field has been increased in the last decades and assessment of Monte Carlo simulation of electron transport in ZnO diode in intelligent information systems is of high significance. The Monte Carlo method as applied to semiconductor transport is a simulation of t...
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