Volume 13, Issue 4, August 2025

  • Research/Technical Note

    Feasibility Study on Radar-based Human Activity Recognition

    Taiwo Samuel Aina*

    Issue: Volume 13, Issue 4, August 2025
    Pages: 143-153
    Received: 19 February 2025
    Accepted: 3 March 2025
    Published: 4 July 2025
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    Abstract: The growing interest in employing radar for human activity recognition is driven by the exponential rise in the incidence and risk of falls associated with aging, compounded by diminished leg strength, prolonged medication side effects, visual impairments, and other variables that contribute to decreasing strength. In comparison to contact devices ... Show More
  • Research Article

    High Performance Hexa Band Compact Microstrip Patch Antenna Design for Terahertz Applications

    Mohammad Alim Uddin*, Mohammad Mesbahul Islam, Monoara Khatun, Mistress Sumaiya Akter Smrity

    Issue: Volume 13, Issue 4, August 2025
    Pages: 154-167
    Received: 21 May 2025
    Accepted: 25 June 2025
    Published: 15 July 2025
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    Abstract: Designing the multiband antenna presented considerable challenges, requiring meticulous optimization to ensure consistent performance across multiple frequency ranges. This research introduces an innovative rectangular microstrip patch antenna (RMPA) that operates as a hexa-band in the terahertz (THz) frequency spectrum. The antenna's compact physi... Show More
  • Research Article

    Applications of Adaptive Filtering Techniques for Noise Cancellation Systems to the Ultrasonic Non-Destructive Evaluation (NDE)

    Birtukan Yenealem, Mamaru Genetu*, Elias Mamushet

    Issue: Volume 13, Issue 4, August 2025
    Pages: 168-183
    Received: 28 May 2025
    Accepted: 16 June 2025
    Published: 28 July 2025
    DOI: 10.11648/j.jeee.20251304.13
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    Abstract: The performance of ultrasonic non-destructive evaluation (NDE) systems is frequently limited by backscattering and electronic noise, which reduce sensitivity and resolution, particularly in industrial environments. At the Metals Industry Development Institute in Ethiopia, the ultrasonic NDT flaw detector (model UFD-01/T) has been employed to defect... Show More
  • Research Article

    Influence of Parasitic Parameters on Switching Characteristics in Single and Paralleled Silicon Carbide Power MOSFETs

    Osama al Kassem*, Nidal Zaidan

    Issue: Volume 13, Issue 4, August 2025
    Pages: 184-204
    Received: 25 June 2025
    Accepted: 9 July 2025
    Published: 30 July 2025
    DOI: 10.11648/j.jeee.20251304.14
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    Abstract: This research evaluates the switching performance of silicon carbide (SiC) transistors compared to silicon (Si) transistors through a double pulse test. The performance was analyzed by measuring switching losses, di/dt, overshooting and switching times. The results demonstrated that switching losses, as well as rise and fall times, are reduced by h... Show More