Archive:: American Journal of Optics and Photonics:: Science Publishing Group

Volume 4, Issue 5, October 2016

First Investigation of Optical Properties and Local Structure of
Gd³⁺ Doped Nano-Crystalline GeSe₂

H. Hantour

Issue: Volume 4, Issue 5, October 2016

Pages: 40-45

Received: 31 October 2016

Accepted: 12 November 2016

Published: 29 November 2016

DOI: 10.11648/j.ajop.20160405.11

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Abstract: Pure and Gd-doped nano-crystalline GeSe₂ were prepared by the melt-quenching technique. The crystal structure, local structure and emission properties are investigated. Structure analysis using Rietveld program suggests monoclinic structure for both virgin and doped samples with nano-particle size 41nm for GeSe₂ and 48nm for Gd-doped sample. A wide... Show More

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Behaviour of Non-ideal Saturable Absorber Doped on Active Fiber

Abdallah Ijjeh, Saed Thuneibat

Issue: Volume 4, Issue 5, October 2016

Pages: 46-50

Received: 23 September 2016

Accepted: 5 October 2016

Published: 2 December 2016

DOI: 10.11648/j.ajop.20160405.12

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Abstract: In this paper, a non-ideal saturable absorber doped with an active fiber device is considered. The differential equations that describe the behavior of the device are simplified and solved numerically. The results show that as the non-ideal term (loss) increases, the laser performance degradation increases.

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Electrons Break to Photons Even in a Low Voltage Electric Circuit

Hadi Ensan

Issue: Volume 4, Issue 5, October 2016

Pages: 51-56

Received: 26 October 2016

Accepted: 11 November 2016

Published: 12 December 2016

DOI: 10.11648/j.ajop.20160405.13

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Abstract: This paper is the theory of breaking electrons in ordinary circuit elements like resistors and Light-Emitting Diodes (LED’s). Undergoing a change of electron has not been considered in the low voltage circuits so far. As it is shown here, there is a difference current before and after LED and resistors. The possibility of leakage current or escapin... Show More

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